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AMC1303E0510 Datasheet, PDF (4/40 Pages) Texas Instruments – Small, High-Precision, Reinforced Isolated Delta-Sigma Modulators with Internal Clock
AMC1303E0510, AMC1303M0510, AMC1303E0520, AMC1303M0520
AMC1303E2510, AMC1303M2510, AMC1303E2520, AMC1303M2520
SBAS771 – JUNE 2017
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings(1)
MIN
MAX
UNIT
Supply voltage, AVDD to AGND or DVDD to DGND
–0.3
6.5
V
Analog input voltage at AINP, AINN
AGND – 6
AVDD + 0.5
V
Digital output voltage at DOUT, CLKOUT
DGND – 0.5 DVDD + 0.5
V
Input current to any pin except supply pins
–10
10
mA
Junction temperature, TJ
Storage temperature, Tstg
150
°C
–65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
V(ESD) Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
VALUE
±2000
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
AVDD
DVDD
TA
Analog (high-side) supply voltage (AVDD to AGND)
Digital (controller-side) supply voltage (DVDD to DGND)
Operating ambient temperature
MIN
NOM
MAX UNIT
3.0
5.0
5.5 V
2.7
3.3
5.5 V
–40
125 °C
7.4 Thermal Information
THERMAL METRIC(1)
AMC1303x
DWV (SOIC)
UNIT
8 PINS
RθJA
RθJC(top)
RθJB
ψJT
ψJB
RθJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
112.2
47.6
60.0
23.1
60.0
N/A
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Power Ratings
PARAMETER
PD
Maximum power dissipation
(both sides)
PD1
Maximum power dissipation
(high-side supply)
PD2
Maximum power dissipation
(low-side supply)
TEST CONDITIONS
AMC1303Exxx20, AVDD = DVDD = 5.5 V
AMC1303Mxxx20, AVDD = DVDD = 5.5 V
AMC1303xxx20, AVDD = 5.5 V
AMC1303Exxx20, DVDD = 5.5 V
AMC1303Mxxx20, DVDD = 5.5 V
MIN
TYP
MAX UNIT
89.65
mW
93.50
53.90 mW
35.75
mW
39.60
4
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