MSP430G2X32_14 Datasheet, PDF (33/61 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430G2x32
MSP430G2x02
www.ti.com
SLAS723H – DECEMBER 2010 – REVISED MAY 2013
10-Bit ADC, Temperature Sensor and Built-In V_MID (MSP430G2x32 Only)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
I_SENSOR
TC_SENSOR
t_{Sensor(sample)}
PARAMETER
Temperature sensor supply
current ⁽¹⁾
Sample time required if channel
10 is selected ⁽³⁾
TEST CONDITIONS
REFON = 0, INCHx = 0Ah,
T_A = 25°C
ADC10ON = 1, INCHx = 0Ah ⁽²⁾
ADC10ON = 1, INCHx = 0Ah,
Error of conversion result ≤ 1 LSB
V_CC
MIN TYP
3V
60
3V
3.55
3V
30
I_VMID
V_MID
t_VMID(sample)
Current into divider at channel 11 ADC10ON = 1, INCHx = 0Bh
V_CC divider at channel 11
Sample time required if channel
11 is selected ⁽⁵⁾
ADC10ON = 1, INCHx = 0Bh,
V_MID ≈ 0.5 × V_CC
ADC10ON = 1, INCHx = 0Bh,
Error of conversion result ≤ 1 LSB
3V
3V
1.5
3V
1220
MAX UNIT
µA
mV/°C
µs
(4) _µA
V
ns
(1) The sensor current I_SENSOR is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is
high). When REFON = 1, I_SENSOR is included in I_REF+. When REFON = 0, I_SENSOR applies during conversion of the temperature sensor
input (INCH = 0Ah).
(2) The following formula can be used to calculate the temperature sensor output voltage:
V_Sensor,typ = TC_Sensor (273 + T [°C] ) + V_{Offset,sensor} [mV] or
V_Sensor,typ = TC_Sensor T [°C] + V_Sensor(T_A = 0°C) [mV]
(3) The typical equivalent impedance of the sensor is 51 kΩ. The sample time required includes the sensor-on time t_SENSOR(on).
(4) No additional current is needed. The V_MID is used during sampling.
(5) The on-time t_VMID(on) is included in the sampling time t_VMID(sample); no additional on time is needed.
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
V_{CC(PGM/ERASE)}
f_FTG
I_PGM
I_ERASE
t_CPT
t_CMErase
PARAMETER
Program and erase supply voltage
Flash timing generator frequency
Supply current from V_CC during program
Supply current from V_CC during erase
Cumulative program time⁽¹⁾
Cumulative mass erase time
Program and erase endurance
TEST CONDITIONS
V_CC
2.2 V, 3.6 V
2.2 V, 3.6 V
2.2 V, 3.6 V
2.2 V, 3.6 V
MIN TYP
2.2
257
1
1
20
10⁴
10⁵
t_Retention
t_Word
t_{Block, 0}
t_{Block, 1-63}
t_{Block, End}
t_{Mass Erase}
t_{Seg Erase}
Data retention duration
Word or byte program time
Block program time for first byte or word
Block program time for each additional
byte or word
Block program end-sequence wait time
Mass erase time
Segment erase time
T_J = 25°C
(2)
(2)
(2)
(2)
(2)
(2)
100
30
25
18
6
10593
4819
MAX UNIT
3.6 V
476 kHz
5 mA
7 mA
10 ms
ms
cycles
years
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word or byte write mode and block write mode.
(2) These values are hardwired into the flash controller's state machine (t_FTG = 1/f_FTG).
Copyright © 2010–2013, Texas Instruments Incorporated
Submit Documentation Feedback
33