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CC256X_13 Datasheet, PDF (30/51 Pages) Texas Instruments – Bluetooth and Dual-Mode Controller
CC256x
SWRS121C – JULY 2012 – REVISED OCTOBER 2013
www.ti.com
Conditions: VDD_IN = 3.6 V, 25°C, 26-MHz fast clock, nominal unit, 4-dBm output power
Operational Mode
Master and Slave
Average Current
Synchronous connection oriented (SCO) link HV3
Master and slave
12
Extended SCO (eSCO) link EV3 64 kbps, no retransmission
Master and slave
11.5
eSCO link 2-EV3 64 kbps, no retransmission
Master and slave
8.3
GFSK full throughput: TX = DH1, RX = DH5
EDR full throughput: TX = 2-DH1, RX = 2-DH5
EDR full throughput: TX = 3-DH1, RX = 3-DH5
Master and slave
38.5
Master and slave
39.2
Master and slave
39.2
Sniff, one attempt, 1.28 seconds
Page or inquiry scan 1.28 seconds, 11.25 ms
Page (1.28 seconds) and inquiry (2.56 seconds) scans,
11.25 ms
Master and slave
Master and slave
Master and slave
76 and 100
300
430
4.1.3.2.2 Current Consumption for Different LE Scenarios
Conditions: VDD_IN = 3.6 V, 25°C, 26-MHz fast clock, nominal unit, 10 dBm output power
Mode
Advertising, nonconnectable
Advertising, discoverable
Scanning
Connected (master role)
Description
Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data
Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data
Listening to a single frequency per window
1.28-seconds scan interval
11.25-ms scan window
500-ms connection interval
0-ms slave connection latency
Empty TX and RX LL packets
Average Current
104
121
302
169
4.1.4 General Electrical Characteristics
Unit
mA
mA
mA
mA
mA
mA
μA
μA
μA
Unit
µA
µA
µA
µA
Rating
High-level output voltage, VOH
Low-level output voltage, VOL
I/O input impedance
Output rise and fall times, 10% to 90% (digital pins)
I/O pull currents PCM-I2S bus, TX_DBG
PU
PD
All others
PU
PD
Condition
Min
Max
Unit
At 2, 4, 8 mA
0.8 x VDD_IO
VDD_IO
V
At 0.1 mA
VDD_IO – 0.2
VDD_IO
At 2, 4, 8 mA
0
0.2 x VDD_IO
V
At 0.1 mA
0
0.2
Resistance
1
MΩ
Capacitance
5
pF
CL = 20 pF
typ = 6.5
3.5
10
ns
9.7
μA
typ = 27
9.5
55
typ = 100
50
300
μA
typ = 100
50
360
30
Device Specifications
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