MDP5N50B Datasheet, PDF (3/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 5.0 A, 1.4(ohm)

12
V_gs=5.0V
=5.5V
=6.0V
=6.5V
=7.0V
8
=8.0V
=10.0V
=15.0V
4
Notes
1. 250㎲ PulseTest
2. T_C=25℃
0
0
5
10
15
20
25
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. V_GS = 10 V
2. I_D = 5.0A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
2.5
2.0
V_GS=10V
1.5
V_GS=20V
1.0
2.5
5.0
7.5
10.0
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. I_D = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
10
* Notes ;
1. Vds=30V
150℃
-55℃
1
25℃
※ Notes :
1. V = 0 V
GS
2.250µs Pulse test
10
150℃
1
25℃
0.1
2
3
4
5
6
7
V_GS [V]
Fig.5 Transfer Characteristics
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V , Source-Drain Voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Dec 2011. Version 1.0
3
MagnaChip Semiconductor Ltd.