MDP5N50B Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 5.0 A, 1.4(ohm)

MDP5N50B / MDF5N50B
N-Channel MOSFET 500V, 5.0 A, 1.4Ω
General Description
The MDP/F5N50B uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F5N50B is suitable device for SMPS, HID and
general purpose applications.
Features
V_DS = 500V
I_D = 5.0A
R_DS(ON) ≤ 1.4Ω
@V_GS = 10V
@V_GS = 10V
Applications
Power Supply
PFC
Ballast
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current⁽¹⁾
Power Dissipation
Repetitive Avalanche Energy⁽¹⁾
Peak Diode Recovery dv/dt⁽³⁾
Single Pulse Avalanche Energy⁽⁴⁾
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
T_C=25^oC
T_C=100^oC
T_C=25^oC
Derate above 25 ^oC
Symbol
V_DSS
V_GSS
I_D
I_DM
P_D
E_AR
dv/dt
E_AS
T_J, T_stg
MDP5N50B MDF5N50B
500
±30
5.0
5.0*
3.2
3.2*
20
20*
93
27
0.74
0.22
9.3
4.5
230
-55~150
Unit
V
V
A
A
A
W
W/ ^oC
mJ
V/ns
mJ
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient⁽¹⁾
Thermal Resistance, Junction-to-Case⁽¹⁾
Dec 2011. Version 1.0
Symbol
R_θJA
R_θJC
MDP5N50B
62.5
1.35
MDF5N50B
62.5
4.6
Unit
o_C/W
1
MagnaChip Semiconductor Ltd.