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MDP5N50B Datasheet, PDF (2/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 5.0 A, 1.4(ohm)
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Ordering Information
Part Number
MDP5N50BTH
MDF5N50BTH
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta = 25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
IS
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Test Condition
Min
ID = 250µA, VGS = 0V
500
VDS = VGS, ID = 250µA
2.0
VDS = 500V, VGS = 0V
-
VGS = ±30V, VDS = 0V
-
VGS = 10V, ID = 2.5A
-
VDS = 30V, ID = 2.5A
-
-
VDS = 400V, ID = 5.0A, VGS = 10V(3)
-
-
-
VDS = 25V, VGS = 0V, f = 1.0MHz
-
-
-
VGS = 10V, VDS = 250V, ID = 5.0A,
-
RG = 25Ω(3)
-
-
-
IS = 5.0A, VGS = 0V
-
-
IF = 5.0A, dl/dt = 100A/µs(3)
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤5.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C
4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Typ
-
-
-
-
1.15
5
11.5
2.3
4.1
513
3.6
69
11
16
46
24
5.0
-
232
1.3
Max
-
4.0
1
100
1.4
-
-
-
-
-
-
-
-
-
-
-
-
1.4
-
-
Unit
V
µA
nA
Ω
S
nC
pF
ns
A
V
ns
µC
Dec 2011. Version 1.0
2
MagnaChip Semiconductor Ltd.
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