CD4010B-Q1 Datasheet, PDF (3/14 Pages) Texas Instruments – CMOS HEX BUFFER/CONVERTER

CD4010B-Q1
www.ti.com
SCHS379A – MARCH 2010 – REVISED JANUARY 2012
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
over operating free-air temperature range (unless otherwise noted)
V_DD DC supply voltage range, voltages referenced to V_SS terminal
Input voltage range, all inputs
DC input current, any one input
P_D Power dissipation per package
T_A = –40°C to +100°C
T_A = +100°C to +125°C
T_A
T_stg
ESD
Device dissipation per output
transistor
T_A = full package-temperature range
(all packages types)
Operating temperature range
Storage temperature range
Latch-up performance per JESD 78, Class I
Electrostatic discharge rating⁽²⁾
Human-body model (HBM)
Machine model (MM)
Charged-Device Model (CDM)
VALUE
–0.5 to +20
–0.5 to V_DD +0.5
±10
500
Derate linearly at
12 mW/°C to 200 mW
100
–40 to +125
–65 to +150
100
500
100
1000
UNIT
V
V
mA
mW
mW
°C
°C
mA
V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Tested in accordance with AEC-Q100.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
V_DD
Supply voltage range⁽¹⁾
V_CC
V_I
Input voltage range
3
18
V
3
V_DD
V_CC
V_DD
V
(1) The CD4010B has high-to-low level voltage conversion capability, but not low-to-high level; therefore, it is recommended that
V_DD > V_I > V_CC.
Copyright © 2010–2012, Texas Instruments Incorporated
Product Folder Link(s): CD4010B-Q1
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