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CC256X Datasheet, PDF (28/51 Pages) Texas Instruments – Bluetooth® Smart Ready Controller
CC256x
SWRS121C – JULY 2012 – REVISED OCTOBER 2013
www.ti.com
4 Device Specifications
Unless otherwise indicated, all measurements are taken at the device pins of the TI test evaluation board
(EVB).
All specifications are over process, voltage and temperature, unless otherwise indicated.
4.1 General Device Requirements and Operation
4.1.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
NOTE
Unless otherwise indicated, all parameters are measured as follows:
VDD_IN = 3.6 V, VDD_IO = 1.8 V
See (1)
Value
Unit
Ratings over operating free-air temperature range
VDD_IN
Supply voltage range
–0.5 to 4.8
V (2)
VDDIO_1.8V
Input voltage to analog pins(3)
–0.5 to 2.145
V
–0.5 to 2.1
V
Input voltage to all other pins
Operating ambient temperature range(4)
–0.5 to (VDD_IO + 0.5)
V
–40 to 85
°C
Storage temperature range
–55 to 125
°C
ESD stress
voltage (5)
Bluetooth RF inputs
Human body model (HBM)(6)
Charged device model (CDM)(7)
Device
Device
10
dBm
500
V
250
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Maximum allowed depends on accumulated time at that voltage: VDD_IN is defined in Section 5, Reference Design for Power and
Radio Connections.
(3) Analog pins: BT_RF, XTALP, and XTALM
(4) The reference design supports a temperature range of –20°C to 70°C because of the operating conditions of the crystal.
(5) ESD measures device sensitivity and immunity to damage caused by electrostatic discharges into the device.
(6) The level listed is the passing level per ANSI/ESDA/JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows safe
manufacturing with a standard ESD control process, and manufacturing with less than 500-V HBM is possible, if necessary precautions
are taken. Pins listed as 1000 V can actually have higher performance.
(7) The level listed is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP157 states that 250-V CDM allows safe
manufacturing with a standard ESD control process, and manufacturing with less than 250-V CDM is possible, if necessary precautions
are taken. Pins listed as 250 V can actually have higher performance.
28
Device Specifications
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