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LMH6624_16 Datasheet, PDF (25/38 Pages) Texas Instruments – LMH6624 and LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier
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Typical Application (continued)
LMH6624, LMH6626
SNOSA42G – NOVEMBER 2002 – REVISED DECEMBER 2014
16
14
ini
12
10
8
en/RF
it
6
in
4
2
0
100
1k
10k
Rf (:)
Figure 59. Current Noise Density vs. Feedback Resistance
+5VDC
D1
CD = 10 pF
ID
RF
(Noiseless)
ini
Noiseless Op Amp
Figure 60. Transimpedance Amplifier Equivalent Input Source Mode
From Figure 61, it is clear that with the LMH6624 extremely low-noise characteristics, for RF < 3 kΩ, the noise
performance is entirely dominated by RF thermal noise. Only above this RF threshold, the input noise current (in)
of LMH6624 becomes a factor and at no RF setting does the LMH6624 input noise voltage play a significant role.
This noise analysis has ignored the possible noise gain increase, due to photo-diode capacitance, at higher
frequencies.
8.2.3 Application Curve
16
14
ini
12
10
it
8
en/RF
6
4
2
in
0
100
1k
10k
FEEDBACK RESISTANCE, RF (:)
Figure 61. Current Noise Density vs. Feedback Resistance
Copyright © 2002–2014, Texas Instruments Incorporated
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