THS7372 Datasheet, PDF (2/49 Pages) Texas Instruments – 4-Channel Video Amplifier with One CVBS and Three Full-HD Filters with 6-dB Gain

THS7372
SBOS578 – AUGUST 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PRODUCT
THS7372IPW
THS7372IPWR
PACKAGE/ORDERING INFORMATION⁽¹⁾⁽²⁾
PACKAGE-LEAD
PACKAGE
DESIGNATOR
PACKAGE
MARKING
TRANSPORT
MEDIA, QUANTITY
TSSOP-14
PW
THS7372
Rails, 90
Tape and Reel, 2000
ECO STATUS⁽²⁾
Pb-Free, Green
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
(2) These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree.
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Over operating free-air temperature range, unless otherwise noted.
Supply voltage, V_S+ to GND
Input voltage, V_I
Output current, I_O
Continuous power dissipation
Maximum junction temperature, any condition⁽²⁾, T_J
Maximum junction temperature, continuous operation, long-term reliability⁽³⁾, T_J
Storage temperature range, T_STG
Human body model (HBM)
ESD rating:
Charge device model (CDM)
Machine model (MM)
THS7372
UNIT
5.5
V
–0.4 to V_S+
V
±90
mA
See Thermal Information Table
+150
°C
+125
°C
–60 to +150
°C
4000
V
1000
V
200
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
RECOMMENDED OPERATING CONDITIONS
Supply voltage, V_S+
Ambient temperature, T_A
MIN
NOM
MAX
UNIT
2.7
5
V
–40
+85
°C
2
Copyright © 2011, Texas Instruments Incorporated