THS7368_14 Datasheet, PDF (2/41 Pages) Texas Instruments – 6-Channel Video Amplifier with 3-SD and 3-SD/ED/HD/Full-HD Filters and 6-dB Gain

THS7368
SBOS497 – DECEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PRODUCT
THS7368IPW
THS7368IPWR
PACKAGE/ORDERING INFORMATION^{(1) (2)}
PACKAGE-LEAD
TRANSPORT MEDIA, QUANTITY
TSSOP-20
Rails, 70
Tape and Reel, 2000
ECO STATUS⁽²⁾
Pb-Free, Green
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree.
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Over operating free-air temperature range, unless otherwise noted.
Supply voltage, V_S+ to GND
Input voltage, V_I
Output current, I_O
Continuous power dissipation
Maximum junction temperature, any condition⁽²⁾, T_J
Maximum junction temperature, continuous operation, long-term reliability⁽³⁾, T_J
Storage temperature range, T_STG
Human body model (HBM)
ESD rating:
Charge device model (CDM)
Machine model (MM)
THS7368
UNIT
5.5
V
–0.4 to V_S+
V
±90
mA
See the Dissipation Ratings Table
+150
°C
+125
°C
–60 to +150
°C
4000
V
1000
V
200
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
DISSIPATION RATINGS
PACKAGE
TSSOP-20 (PW)
θ_JC
(°C/W)
32.3
θ_JA
(°C/W)
83 ⁽¹⁾
AT T_A ≤ +25°C
POWER RATING
1.2 W
AT T_A = +85°C
POWER RATING
0.48 W
(1) These data were taken with the JEDEC High-K test printed circuit board (PCB). For the JEDEC low-K test PCB, the θ_JA is 130°C/W.
RECOMMENDED OPERATING CONDITIONS
Supply voltage, V_S+
Ambient temperature, T_A
MIN
NOM
MAX
UNIT
2.7
5
V
–40
+85
°C
2
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