LPV521_16 Datasheet, PDF (17/34 Pages) Texas Instruments – NanoPower, 1.8-V, RRIO, CMOS Input, Operational Amplifier

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Typical Characteristics (continued)
At T_J = 25°C, unless otherwise specified.
60
PHASE
C_L = 50 pF
40
C_L = 100 pF
20 ^GAIN
C_L = 200 pF
0
-20
V_S = 5V
R_L = 10 M:
130
110
C_L = 20 pF ₉₀
70
50
30
10
-10
-30
100
1k
10k
100k
FREQUENCY (Hz)
Figure 49. Frequency Response vs. C_L
1000
100
1
V_S = 5V
10
100
1k
10k
FREQUENCY (Hz)
Figure 51. Voltage Noise vs. Frequency
15
10
5
0
-5
-10
V_S = 3.3V
V_CM = V_S/2
-15
-2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
1s/DIV
Figure 53. 0.1 to 10 Hz Time Domain Voltage Noise
LPV521
SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014
3.3
3.0
FALLING EDGE
2.7
2.4
RISING EDGE
2.1
1.8
A_V = +1
V_OUT = V_S
1.5 2.3 3.1 3.9 4.7 5.5
SUPPLY VOLTAGE (V)
Figure 50. Slew Rate vs. Supply Voltage
15
V_S = 1.8V
10
V_CM = V_S/2
5
0
-5
-10
-15
-2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
1s/DIV
Figure 52. 0.1 to 10 Hz Time Domain Voltage Noise
15
V_S = 5V
V_CM = V_S/2
10
5
0
-5
-10
-15
-2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
1s/DIV
Figure 54. 0.1 to 10 Hz Time Domain Voltage Noise
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