TMS320F28069_14 Datasheet, PDF (155/175 Pages) Texas Instruments – Piccolo Microcontrollers

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TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066
TMS320F28065, TMS320F28064, TMS320F28063, TMS320F28062
SPRS698D – NOVEMBER 2010 – REVISED DECEMBER 2012
5.25 Flash Timing
Table 5-78. Flash/OTP Endurance for T Temperature Material⁽¹⁾
ERASE/PROGRAM
TEMPERATURE
MIN
TYP
MAX
N_f
Flash endurance for the array (write/erase cycles)
0°C to 105°C (ambient)
20000 50000
N_OTP OTP endurance for the array (write cycles)
0°C to 30°C (ambient)
1
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
UNIT
cycles
write
Table 5-79. Flash/OTP Endurance for S Temperature Material⁽¹⁾
ERASE/PROGRAM
TEMPERATURE
MIN
TYP
MAX
N_f
Flash endurance for the array (write/erase cycles)
0°C to 125°C (ambient)
20000 50000
N_OTP OTP endurance for the array (write cycles)
0°C to 30°C (ambient)
1
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
UNIT
cycles
write
Table 5-80. Flash/OTP Endurance for Q Temperature Material⁽¹⁾⁽²⁾
ERASE/PROGRAM
TEMPERATURE
MIN
TYP
MAX
N_f
Flash endurance for the array (write/erase cycles)
–40°C to 125°C (ambient) 20000 50000
N_OTP OTP endurance for the array (write cycles)
–40°C to 30°C (ambient)
1
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
(2) The "Q" temperature option is not available on the 2806xU devices.
UNIT
cycles
write
Table 5-81. Flash Parameters at 90-MHz SYSCLKOUT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX UNIT
Program Time 16-Bit Word
50
μs
16K Sector
500
ms
8K Sector
250
ms
Erase Time⁽¹⁾
4K Sector
16K Sector
125
ms
2
s
8K Sector
2
s
I_DDP ⁽²⁾
I_DDIOP ⁽²⁾
I_DDIOP ⁽²⁾
4K Sector
V_DD current consumption during Erase/Program cycle
V_DDIO current consumption during Erase/Program cycle
V_DDIO current consumption during Erase/Program cycle
VREG disabled
VREG enabled
2
s
80
mA
60
120
mA
(1) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
(2) Typical parameters as seen at room temperature including function call overhead, with all peripherals off.
Table 5-82. Flash/OTP Access Timing⁽¹⁾
PARAMETER
MIN
MAX UNIT
t_a(fp)
t_a(fr)
t_a(OTP)
Paged Flash access time
Random Flash access time
OTP access time
36
ns
36
ns
60
ns
(1) Access time numbers shown in this table are prior to device characterization. Final numbers will be published in the TMS datasheet.
Copyright © 2010–2012, Texas Instruments Incorporated
Peripheral and Electrical Specifications 155
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