TS3USB30E_13 Datasheet, PDF (1/20 Pages) Texas Instruments – ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE

TS3USB30E
www.ti.com
SCDS255E – DECEMBER 2008 – REVISED AUGUST 2012
ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps)
1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE
Check for Samples: TS3USB30E
FEATURES
1
• V_CC Operation at 3 V to 4.3 V
• 1.8-V Compatible Control-Pin Inputs
• I_OFF Supports Partial Power-Down-Mode
Operation
– D+/D– Pins Tolerate up to 5.25V
• r_ON = 10 Ω Max
• Δr_ON = 0.35 Ω Typ
• C_io(ON) = 7.5 pF Typ
• Low Power Consumption (1 μA Max)
• –3 dB Bandwidth = 900 MHz Typ
• Latch-Up Performance Exceeds
100 mA Per JESD 78, Class II ⁽¹⁾
• ESD Performance Tested Per JESD 22
– 8000-V Human-Body Model (A114-B,
Class II)
– 1000-V Charged-Device Model (C101)
• ESD Performance I/O Port to GND ⁽²⁾
– 15000-V Human-Body Model
• Packaged in 10-pin TQFN (1.4 mm × 1.8 mm)
APPLICATIONS
• Routes Signals for USB 1.0, 1.1, and 2.0
RSW PACKAGE
(TOP VIEW)
OE 8
V_{CC 9}
S 10
76
12
5 D–
4 GND
3 D+
RSW PACKAGE
(BOTTOM VIEW)
S 10
V_CC 9
OE 8
12
76
3 D+
4 GND
5 D–
DGS PACKAGE
(TOP VIEW)
(1) Except OE and S inputs
(2) High-voltage HBM is performed in addition to the standard
HBM testing (A114-B, Class II) and applies to I/O ports tested
with respect to GND only.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2012, Texas Instruments Incorporated