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TMS417800A Datasheet, PDF (1/24 Pages) Texas Instruments – 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY
This data sheet is applicable to all
TMS417800As symbolized by Revision “E”
and subsequent revisions as described in the
device symbolization section.
D Organization . . . 2 097152 × 8
D Single 5-V Power Supply (± 10% Tolerance)
D 2 048-Cycle Refresh in 32 ms
D Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME
tRAC
MAX
TIME
tCAC
MAX
TIME
tAA
MAX
EDO
CYCLE
MIN
’417800A-50
’417800A-60
50 ns 13 ns
60 ns 15 ns
25 ns
30 ns
20 ns
25 ns
’417800A-70 70 ns 18 ns 35 ns 30 ns
D Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR) Refresh
D High-Impedance State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 28-Lead
400-Mil-Wide Surface-Mount Small Outline
J-Lead (SOJ) Package (DZ Suffix)
D Ambient Temperature Range
0°C to 70°C
description
The TMS417800A is a 16 777 216-bit dynamic
random-access memory (DRAM) device
organized as 2 097 152 words of eight bits. It
employs TI’s state-of-the-art technology for high
performance, reliability, and low power.
This device features maximum RAS access times
of 50-, 60-, and 70 ns. All addresses and data-in
lines are latched on-chip to simplify system
design. Data out is unlatched to allow greater
system flexibility.
The TMS417800A is offered in a 28-lead plastic
surface-mount SOJ package (DZ suffix). This
package is designed for operation from 0°C to
70°C.
TMS417800A
2097152 BY 8-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMKS888B – AUGUST 1996 – REVISED SEPTEMBER 1997
DZ PACKAGE
( TOP VIEW )
VCC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
W6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 DQ7
26 DQ6
25 DQ5
24 DQ4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
PIN NOMENCLATURE
A[0: 10]
CAS
DQ[0: 7]
OE
RAS
VCC
VSS
W
Address Inputs
Column-Address Strobe
Data In / Data Out
Output Enable
Row-Address Strobe
5-V Supply
Ground
Write Enable
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
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