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TC244 Datasheet, PDF (1/19 Pages) Texas Instruments – 786- × 488-PIXEL CCD IMAGE SENSOR
TC244
786- × 488-PIXEL CCD IMAGE SENSOR
• High-Resolution, Solid-State Image Sensor
for NTSC Color TV Applications
• 8-mm Image-Area Diagonal, Compatible
With 1/2” Vidicon Optics
• 755 (H) x 242 (V) Active Elements in
Image-Sensing Area
• Advanced On-Chip Signal Processing
• Low Dark Current
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 70 dB
• High Sensitivity
• High Photoresponse Uniformity
• High Blue Response
• Single-Phase Clocking
• Separate Outputs for Each Color (RGB)
• Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
SOCS016B – NOVEMBER 1989 – REVISED DECEMBER 1991
DUAL-IN-LINE PACKAGE
(TOP VIEW)
SUB 1
IAG 2
ABG 3
ADB 4
OUT3 (B) 5
OUT2 (G) 6
OUT1 (R) 7
AMP GND 8
CDB 9
SUB 10
20 SUB
19 IAG
18 ABG
17 SAG
16 SRG3
15 SRG2
14 SRG1
13 NC
12 TRG
11 IDB
NC – No internal connection
description
The TC244 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip color
NTSC TV applications. The device is intended to replace the 1/2-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC244 is configured into 242 lines with 786 elements in each line. Twenty-nine
elements are provided in each line for dark reference. The blooming protection incorporated into the sensor is
based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is
activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing
element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The single-chip color-sensing capability of the TC244 is achieved
by laminating a striped color filter with RGB organization on top of the image-sensing area. The stripes are
precisely aligned to the sensing elements, and the signal charge columns are multiplexed during the readout
into three separate registers with three separate outputs corresponding to each individual color.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1991, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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