BQ24170 Datasheet, PDF (9/35 Pages) Texas Instruments – 1.6-MHz Synchronous Switch-Mode Li-Ion and Li-Polymer Stand-Alone Battery Charger

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bq24170
bq24172
SLUSAD2A – NOVEMBER 2010 – REVISED NOVEMBER 2010
ELECTRICAL CHARACTERISTICS
4.5V ≤ V(PVCC, AVCC) ≤ 17V, –40°C < T_J + 125°C, typical values are at T_A = 25°C, with respect to AGND (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNITS
OPERATING CONDITIONS
V_{AVCC_OP}
AVCC input voltage operating range during
charging
4.5
17
V
QUIESCENT CURRENTS
V_AVCC > V_UVLO, V_SRN > V_AVCC (SLEEP), T_J = 0°C
to 85°C
15
I_BAT
Battery discharge current (sum of currents
into AVCC, PVCC, ACP, ACN)
BTST, SW, SRP, SRN, V_AVCC > V_UVLO, V_AVCC >
V_SRN, ISET < 40mV, V_BAT=12.6V, Charge
disabled
25 µA
BTST, SW, SRP, SRN, V_AVCC > V_UVLO, V_AVCC >
V_SRN, ISET > 120mV, V_BAT=12.6V, Charge done
25
V_AVCC > V_UVLO, V_AVCC > V_SRN, ISET < 40mV,
V_BAT=12.6V, Charge disabled
1.2
1.5
I_AC
Adapter supply current (sum of current into V_AVCC > V_UVLO, V_AVCC > V_SRN, ISET > 120mV,
AVCC,ACP, ACN)
Charge enabled, no switching
2.5
5 mA
V_AVCC > V_UVLO, V_AVCC > V_SRN, ISET > 120mV,
Charge enabled, switching
15 ⁽¹⁾
CHARGE VOLTAGE REGULATION
CELL to AGND, 1 cell, measured on SRN
4.2
V
V_{BAT_REG}
SRN regulation voltage (bq24170)
CELL floating, 2 cells, measured on SRN
CELL to VREF, 3 cells, measured on SRN
8.4
V
12.6
V
V_{FB_REG}
Feddback regulation voltage (bq24172)
Charge voltage regulation accuracy
I_FB
Leakage current into FB pin (bq24172)
CURRENT REGULATION – FAST CHARGE
Measured on FB
T_J = 0°C to 85°C
T_J = –40°C to 125°C
V_FB = 2.1 V
–0.5%
-0.7%
2.1
V
0.5%
0.7%
100 nA
V_ISET
K_ISET
ISET Voltage Range
R_SENSE = 10mΩ
Charge Current Set Factor (Amps of Charge
Current per Volt on ISET pin)
R_SENSE = 10mΩ
0.12
0.8
V
5
A/V
Charge Current Regulation Accuracy
(with Schottky diode on SW)
V_{ISET_CD}
Charge Disable Threshold
V_{ISET_CE}
Charge Enable Threshold
I_ISET
Leakage Current into ISET
INPUT CURRENT REGULATION
V_SRP-SRN = 40 mV
V_SRP-SRN = 20 mV
V_SRP-SRN = 5 mV
ISET falling
ISET rising
VISET = 2V
-4%
-7%
-25%
40
4%
7%
25%
50
mV
100
120 mV
100 nA
K_DPM
Input DPM Current Set Factor (Amps of
Input Current per Volt on ACSET)
R_SENSE = 10mΩ
5
A/V
Input DPM Current Regulation Accuracy
(with Schottky diode on SW)
I_ACSET
Leakage Current into ACSET pin
CURRENT REGULATION – PRE-CHARGE
K_IPRECHG
Precharge current set factor
Precharge current regulation accuracy
V_ACP-ACN = 80 mV
V_ACP-ACN = 40 mV
V_ACP-ACN = 20 mV
V_ACP-ACN = 5 mV
V_ACP-ACN = 2.5 mV
V_ACSET = 2V
Percentage of fast charge current
V_SRP-SRN = 4 mV
V_SRP-SRN = 2 mV
-4%
-9%
–15%
–20%
-40%
4%
9%
15%
20%
40%
100 nA
–25%
–40%
10% ⁽²⁾
25%
40%
(1) Specified by design
(2) The minimum current is 120 mA on 10mΩ sense resistor.
Copyright © 2010, Texas Instruments Incorporated
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