BQ24170 Datasheet, PDF (10/35 Pages) Texas Instruments – 1.6-MHz Synchronous Switch-Mode Li-Ion and Li-Polymer Stand-Alone Battery Charger

bq24170
bq24172
SLUSAD2A – NOVEMBER 2010 – REVISED NOVEMBER 2010
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ELECTRICAL CHARACTERISTICS (continued)
4.5V ≤ V(PVCC, AVCC) ≤ 17V, –40°C < T_J + 125°C, typical values are at T_A = 25°C, with respect to AGND (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNITS
CHARGE TERMINATION
K_TERM
Termination current set factor
Termination current regulation accuracy
t_{TERM_DEG}
Deglitch time for termination (both edges)
t_QUAL
Termination qualification time
I_QUAL
Termination qualification current
INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO)
Percentage of fast charge current
V_SRP-SRN = 4 mV
V_SRP-SRN = 2 mV
V_SRN > V_RECH and I_CHG < I_TERM
Discharge current once termination is detected
10% ⁽³⁾
–25%
25%
–40%
40%
100
ms
250
ms
2
mA
V_UVLO
AC under-voltage rising threshold
Measure on AVCC
V_{UVLO_HYS}
AC under-voltage hysteresis, falling
Measure on AVCC
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
3.4
3.6
3.8
V
300
mV
V_SLEEP
V_{SLEEP_HYS}
t_{SLEEP_FALL_CD}
t_{SLEEP_FALL_FETOFF}
t_{SLEEP_FALL}
SLEEP mode threshold
SLEEP mode hysteresis
SLEEP deglitch to disable charge
SLEEP deglitch to turn off input FETs
Deglitch to enter SLEEP mode, disable
VREF and enter low quiescent mode
V_AVCC – V_SRN falling
V_AVCC – V_SRN rising
V_AVCC – V_SRN falling
V_AVCC – V_SRN falling
V_AVCC – V_SRN falling
50
90
150 mV
200
mV
1
ms
5
ms
100
ms
t_{SLEEP_PWRUP}
Deglitch to exit SLEEP mode, and enable
VREF
V_AVCC – V_SRN rising
30
ms
ACN-SRN COMPARATOR
V_ACN-SRN
Threshold to turn on BATFET
V_{ACN-SRN_HYS}
Hysteresis to turn off BATFET
t_{BATFETOFF_DEG}
Deglitch to turn on BATFET
t_{BATFETON_DEG}
Deglitch to turn off BATFET
BAT LOWV COMPARATOR
V_ACN-SRN falling
V_ACN-SRN rising
V_ACN-SRN falling
V_ACN-SRN rising
150
220
300 mV
100
mV
2
ms
50
µs
bq24170, CELL to AGND, 1 cell, measure on
SRN
2.87
2.9 2.93
V_LOWV
Precharge to fast charge transition
bq24170, CELL floating, 2 cells, measure on
SRN
bq24170, CELL to VREF, 3 cells, measure on
SRN
5.74
5.8 5.86
V
8.61
8.7 8.79
bq24172, measure on FB
1.43
1.45 1.47
bq24170, CELL to AGND, 1 cell, measure on
SRN
200
V_{LOWV_HYS}
Fast charge to precharge hysteresis
bq24170, CELL floating, 2 cells, measure on
SRN
bq24170, CELL to VREF, 3 cells, measure on
SRN
400
mV
600
bq24172, measure on FB
100
t_pre2fas
V_LOWV rising deglitch
t_fast2pre
V_LOWV falling deglitch
RECHARGE COMPARATOR
Delay to start fast charge current
Delay to start precharge current
25
ms
25
ms
bq24170, CELL to AGND, 1 cell, measure on
SRN
70
100
130
V_RECHG
Recharge Threshold, below regulation
voltage limit, V_{BAT_REG}-V_SRN (bq24170), or
V_{FB_REG}-V_FB (bq24172)
bq24170, CELL floating, 2 cells, measure on
SRN
bq24170, CELL to VREF, 3 cells, measure on
SRN
140
200
260
mV
210
300
390
bq24172, measure on FB
35
50
65
t_{RECH_RISE_DEG}
t_{RECH_FALL_DEG}
V_RECHG rising deglitch
V_RECHG falling deglitch
VFB decreasing below V_RECHG
VFB increasing above V_RECHG
10
ms
10
ms
(3) The minimum current is 120 mA on 10mΩ sense resistor.
10
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