TC211 Datasheet, PDF (7/13 Pages) Texas Instruments – 192- × 165-pixel ccd image sensor

TC211
192- × 165-PIXEL CCD IMAGE SENSOR
SOCS008B – JANUARY 1990
optical characteristics, T_A = 25°C (unless otherwise noted)
PARAMETER
MIN TYP MAX UNIT
Sensitivity (see Note 9)
No IR filter
With IR filter
Measured at VU (see Note 10)
260
mV/lx
33
Saturation signal (see Note 11)
Antiblooming disabled
Antiblooming enabled
400 600
mV
350 450
Strobe
5
Blooming overload ratio (see Note 12)
Shuttered light
100
Output signal nonuniformity (1/2 saturation) (see Note 13)
Image-area well capacity
Dark current
Dark signal (see Note 14)
TA = 21°C
10% 20%
150 × 103
0.027
electrons
nA/cm2
10 15 mV
Dark signal nonuniformity for entire field (see Note 15)
4 15 mV
Modulation transfer function
Horizontal
Vertical
50%
70%
NOTES: 9. Sensitivity is measured at an integration time of 16.667 ms and a source temperature of 2856 K. A CM-500 filter is used.
10. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
12. Blooming overload ratio is the ratio of blooming exposure to saturation exposure.
13. Output signal nonuniformity is the ratio of the maximum pixel-to-pixel difference in output signal to the mean output signal for
exposure adjusted to give 1/2 the saturation output signal.
14. Dark-signal level is measured from the dummy pixels.
15. Dark-signal nonuniformity is the maximum pixel-to-pixel difference in a dark condition.
VIH min
100%
90%
PARAMETER MEASUREMENT INFORMATION
Intermediate Level
VIL max
10%
0%
tr = 220 ns, tf = 330 ns for IAG
tr = 115 ns, tf = 135 ns for ABG
tr
tf
Figure 3. Typical Clock Waveform for IAG and ABG
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