TC211 Datasheet, PDF (1/13 Pages) Texas Instruments – 192- × 165-pixel ccd image sensor

TC211
192- × 165-PIXEL CCD IMAGE SENSOR
• Full-Frame Operation
• Antiblooming Capability
• Single-Phase Clocking for Horizontal and
Vertical Transfers
• Fast Clear Capability
• Dynamic Range . . . 60 dB Typical
• High Blue Response
• High Photoresponse Uniformity
• Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
• 6-Pin Dual-In-Line Ceramic Package
• Square Image Area:
– 2640 µm by 2640 µm
– 192 Pixels (H) by 165 Pixels (V)
– Each Pixel 13.75 µm (H) by 16 µm (V)
SOCS008B – JANUARY 1990
DUAL-IN-LINE PACKAGE
(TOP VIEW)
ABG 1
6 IAG
VSS 2
ADB 3
5 SRG
4 OUT
description
The TC211 is a full-frame charge-coupled device (CCD) image sensor designed specifically for industrial
applications requiring ruggedness and small size. The image-sensing area is configured into 165 horizontal
lines each containing 192 pixels. Twelve additional pixels are provided at the end of each line to establish a dark
reference and line clamp. The antiblooming feature is activated by supplying clock pulses to the antiblooming
gate, an integral part of each image-sensing element. The charge is converted to signal voltage at 4 µV per
electron by a high-performance structure with built-in automatic reset and a voltage-reference generator. The
signal is further buffered by a low-noise two-stage source-follower amplifier to provide high output-drive
capability.
The TC211 is supplied in a 6-pin dual-in-line ceramic package approximately 7,5 mm (0.3 in.) square. The glass
window can be cleaned using any standard method for cleaning optical assemblies or by wiping the surface with
a cotton swab soaked in alcohol.
The TC211 is characterized for operation from – 10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1990, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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