BQ24298_15 Datasheet, PDF (7/51 Pages) Texas Instruments – bq24298 I2C Controlled 3A Single Cell USB Charger With Narrow VDC Power Path Management and Adjustable Voltage USB OTG

www.ti.com
bq24298
SLUSC59 – APRIL 2015
Electrical Characteristics (continued)
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
POWER PATH MANAGEMENT
V_{SYS_MAX}
V_{SYS_MIN}
R_ON(RBFET)
Maximum DC system voltage output
Minimum DC system voltage output
Top reverse blocking MOSFET on-
resistance between VBUS and PMIID
BATFET (Q4) off, V_BAT up to 4.35 V
REG01[3:1] = 101, V_SYSMIN = 3.5 V
4.43 V
3.5 3.65
V
28
41 mΩ
R_ON(HSFET)
R_ON(LSFET)
V_FWD
Internal top switching MOSFET on-
resistance between PMID and SW
Internal bottom switching MOSFET on-
resistance between SW and PGND
BATFET forward voltage in supplement
mode
T_J = –40°C – 85°C
T_J = -40°C – 125°C
T_J = –40°C – 85°C
T_J = -40°C – 125°C
BAT discharge current 10mA
39
51
mΩ
39
58
61
82
mΩ
61
90
30
mV
V_{SYS_BAT}
SYS/BAT comparator
V_BATGD
Battery good comparator rising threshold
V_{BATGD_HYST}
Battery good comparator falling threshold
BATTERY CHARGER
V_BAT < V_SYSMIN , V_SYS falling
V_BAT > V_SYSMIN , V_SYS falling
V_BAT rising
V_BAT falling
80
mV
180
mV
3.55
V
100
mV
V_{BAT_REG_ACC}
I_{ICHG_REG_ACC}
I_{CHG_20pct}
Charge voltage regulation accuracy
Fast charge current regulation accuracy
Charge current with 20% option on
V_BAT = 4.112 V and 4.208 V
V_BAT = 3.8 V, I_CHG = 1024 mA, T_J = 25°C
V_BAT = 3.8 V, I_CHG = 1024 mA, T_J = -20°C – 125°C
V_BAT = 3.8 V, I_CHG = 1792 mA, T_J = -20°C – 125°C
V_BAT = 3.1 V, I_CHG = 104 mA, REG02 = 03 and REG02[0]
=1
–0.5%
-4%
-7%
–10%
75
0.5%
4%
7%
10%
175 mA
V_BATLOWV
V_{BATLOWV_HYST}
Battery LOWV falling threshold
Battery LOWV rising threshold
Fast charge to precharge, REG04[1] = 1
Precharge to fast charge, REG04[1] = 1
(Typical 200-mV hysteresis)
2.6
2.8
2.9 V
2.8
3.0
3.1 V
I_{PRECHG_ACC}
I_{TYP_TERM_ACC}
I_{TERM_ACC}
V_SHORT
V_{SHORT_HYST}
I_SHORT
V_RECHG
t_RECHG
Precharge current regulation accuracy
Typical termination current
Termination current accuracy
Battery short voltage
Battery Short Voltage hysteresis
Battery short current
Recharge threshold below VBAT_REG
Recharge deglitch time
R_{ON_BATFET}
SYS-BAT MOSFET on-resistance
INPUT VOLTAGE/CURRENT REGULATION
VBAT = 2.6 V, I_CHG = 256 mA
I_TERM = 256 mA, I_CHG = 2048 mA
I_TERM = 256 mA, I_CHG = 2048 mA
VBAT falling
VBAT rising
VBAT < 2.2 V
VBAT falling, REG04[0] = 0
VBAT falling, REG04[0] = 0
T_J = 25°C
T_J = –20°C – 125°C
–20%
–20%
20%
256
mA
20%
2.0
V
200
mV
100
mA
100
mV
20
ms
24
28
mΩ
24
35
V_{INDPM_REG_ACC} Input voltage regulation accuracy
USB100
-2%
2%
85
100 mA
I_{USB_DPM}
USB Input current regulation limit, VBUS = ^USB150
5V, current pulled from SW
USB500
125
150 mA
440
500 mA
USB900
750
900 mA
I_{ADPT_DPM}
Input current regulation accuracy
I_{IN_START}
Input current limit during system start up
K_ILIM
I_IN = K_ILIM/R_ILIM
BAT OVER-VOLTAGE PROTECTION
IADP = 1.5 A, REG00[2:0] = 101
VSYS < 2.2 V
1.3
1.5 A
100
mA
395
435
475 A x Ω
V_BATOVP
V_{BATOVP_HYST}
t_BATOVP
Battery over-voltage threshold
Battery over-voltage hysteresis
Battery over-voltage deglitch time to
disable charge
V_BAT rising, as percentage of V_{BAT_REG}
V_BAT falling, as percentage of V_{BAT_REG}
104%
2%
1
µs
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: bq24298
Submit Documentation Feedback
7