BQ24298_15 Datasheet, PDF (5/51 Pages) Texas Instruments – bq24298 I2C Controlled 3A Single Cell USB Charger With Narrow VDC Power Path Management and Adjustable Voltage USB OTG

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bq24298
SLUSC59 – APRIL 2015
PIN
NAME
BAT
NUMBER
13,14
SYS
15,16
PGND
17,18
SW
BTST
REGN
19,20
21
22
Thermal Pad
Pin Functions (continued)
TYPE
DESCRIPTION
P Battery connection point to the positive pin of the battery pack. The internal BATFET is connected between BAT
and SYS. Connect a 10 µF closely to the BAT pin.
I System connection point. The internal BATFET is connected between BAT and SYS. When the battery falls below
the minimum system voltage, switch-mode converter keeps SYS above the minimum system voltage. The SYS pin
has a built-in load to ground which may discharge 330-µF load to less than 0.3 V within 250 ms typically.
P Power ground connection for high-current power converter node. Internally, PGND is connected to the source of the
n-channel LSFET. On PCB layout, connect directly to ground connection of input and output capacitors of the
charger. A single point connection is recommended between power PGND and the analog GND near the IC PGND
pin.
O Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel HSFET and
the drain of the n-channel LSFET. Connect the 0.047-µF bootstrap capacitor from SW to BTST.
P PWM high side driver positive supply. Internally, the BTST is connected to the anode of the boost-strap diode.
Connect the 0.047-µF bootstrap capacitor from SW to BTST.
P PWM low side driver positive supply output. Internally, REGN is connected to the cathode of the boost-strap diode.
Connect a 4.7-µF (10-V rating) ceramic capacitor from REGN to analog GND. The capacitor should be placed close
to the IC. REGN also serves as bias rail of TS pin.
P Exposed pad beneath the IC for heat dissipation. Always solder thermal pad to the board, and have vias on the
thermal pad plane star-connecting to PGND and ground plane for high-current power converter.
7 Specifications
7.1 Absolute Maximum Ratings⁽¹⁾
Voltage
(with respect to GND)
Output sink current
Junction temperature
Storage temperature range, T_stg
VBUS (converter not switching)
PMID (converter not switching)
STAT, PG
BTST
SW
BAT, SYS (converter not switching)
SDA, SCL, INT, OTG, ILIM, REGN, TS, QON, CE PSEL
BTST TO SW
PGND to GND
INT, STAT, PG
MIN
–2
–0.3
–0.3
–0.3
–2
–0.3
–0.3
–0.3
–0.3
–40
–65
MAX
15 ⁽²⁾
15 ⁽²⁾
12
12
7
8 (Peak
for 20ns
duration)
6
7
7
0.3
6
150
150
UNIT
V
V
V
V
V
V
V
V
V
mA
°C
°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground pin unless otherwise noted.
(2) VBUS is specified up to 16 V for a maximum of 24 hours under no load conditions.
7.2 ESD Ratings
V_(ESD) Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
Charged device model (CDM), per JEDEC specification JESD22-
C101 ⁽²⁾
VALUE
1000
250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
V
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