BQ24161B_15 Datasheet, PDF (7/52 Pages) Texas Instruments – bq2416xx 2.5A, Dual-Input, Single-Cell Switched-Mode Li-Ion Battery Charger with Power Path Management and I2C Interface

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bq24160, bq24160A, bq24161
bq24161B, bq24163, bq24168
SLUSAO0F – NOVEMBER 2011 – REVISED JULY 2014
8.4 Thermal Information
THERMAL METRIC⁽¹⁾
bq2416xx
49 PINS (YFF)
24 PINS (RGE)
UNIT
θ_JA
θ_JCtop
θ_JB
ψ_JT
ψ_JB
θ_JCbot
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
49.8
32.6
0.2
30.5
1.1
3.3
°C/W
1.1
0.4
6.6
9.3
n/a
2.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
Circuit of Figure 21, V_SUPPLY = V_USB or V_IN (whichever is supplying the IC), V_UVLO < V_SUPPLY < V_OVP and V_SUPPLY > V_BAT+V_SLP, T_J
= -40°C – 125°C and T_J = 25ºC for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT CURRENTS
I_SUPPLY
I_BATLEAK
I_{BAT_HIZ}
Supply current for control (V_IN or V_USB)
Leakage current from BAT to the Supply
Battery discharge current in High Impedance mode,
(BAT, SW, SYS)
V_UVLO < V_SUPPLY < V_OVP and
V_SUPPLY > V_BAT+V_SLP
PWM switching
PWM NOT switching
0°C < T_J < 85°C, High-Z Mode
0°C < T_J < 85°C, V_BAT = 4.2V, V_USB = V_IN = 0V
0°C< T_J < 85°C, V_BAT = 4.2V, V_SUPPLY = 5V or 0V,
SCL, SDA = 0 V or 1.8V, High-Z Mode
15
mA
5
175
μA
5
μA
55
μA
POWER-PATH MANAGEMENT
V_SYS(REG)
System regulation voltage
Charge Enabled, V_BAT < V_MINSYS
bq24160, 1, 1B, 8
bq24163
Battery FET turned off (Charge Disabled, TS Fault or
Charging Terminated)
3.60
3.7
3.82
3.3
3.4
3.5
V
V_BATREG
V_BATREG
V_BATREG
+ 1.5%
+ 3.0% + 4.17%
V_MINSYS
Minimum system regulation voltage
Charge enabled, V_BAT < V_MINSYS,
Input current limit or V_INDPM active
bq24160, 1, 1B, 8
bq24163
3.4
3.5
3.62
V
3.1
3.2
3.3
V
V_BSUP1
Enter supplement mode threshold
V_BAT > 2.5V
V_BAT
V
–30mV
V_BSUP2
Exit supplement mode threshold
V_BAT > 2.5V
V_BAT
V
–10mV
I_{LIM(discharge)}
t_DGL(SC1)
Current limit, discharge or supplement mode
Deglitch time, SYS short circuit during discharge or
supplement mode
Current monitored in internal FET only.
Measured from (V_BAT – V_SYS) = 300mV to BAT high-
impedance
7
A
250
μs
t_REC(SC1)
Recovery time, SYS short circuit during discharge or
supplement mode
60
ms
Battery range for BGATE and supplement mode
operation
2.5
4.5
V
BATTERY CHARGER
R_ON(BAT-SYS) Internal battery charger MOSFET on-resistance
Measured from BAT to SYS,
V_BAT = 4.2V
YFF pkg
RGE pkg
37
57
mΩ
50
70
V_BATREG
Charge Voltage
Voltage regulation accuracy
Operating in voltage regulation, Programmable range
3.5
–1%
4.44
V
1%
I_CHARGE
Fast charge current range
Fast charge current accuracy
V_BATSHRT ≤ V_BAT < V_BAT(REG) programmable range
0°C to 125°C
550
–10%
2500
mA
+10%
V_BATSHRT
Battery short circuit threshold
100mV Hysteresis
bq24161, 3, 8
bq24160, 1B
1.9
2.0
2.1
V
2.9
3.0
3.1
I_BATSHRT
t_DGL(BATSHRT)
Battery short circuit current
Deglitch time for battery short circuit to fastcharge
transition
V_BAT < V_BATSHRT
50
mA
32
ms
I_TERM
t_DGL(TERM)
V_RCH
t_DGL(RCH)
Termination charge current accuracy
Deglitch time for charge termination
Recharge threshold voltage
Deglitch time
I_TERM = 50mA
I_TERM ≥ 100mA
Both rising and falling, 2mV overdrive, t_RISE, t_FALL = 100ns
Below V_BATREG
VBAT falling below VRCH, tFALL=100ns
–35%
–15%
+35%
+15%
32
ms
120
mV
32
ms
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