TLC876M Datasheet, PDF (6/23 Pages) Texas Instruments – 10-BIT 20 MSPS PARALLEL OUTPUT CMOS ANALOG-TO-DIGITAL CONVERTERS

TLC876M, TLC876I, TLC876C
10-BIT 20 MSPS PARALLEL OUTPUT CMOS
ANALOG-TO-DIGITAL CONVERTERS
SLAS140D – JULY 1997 – REVISED MAY 2000
recommended operating conditions (continued)
digital inputs
High-level input voltage, VIH
Low-level input voltage, VIL
Clock period, tc (see Figure 1)
Pulse duration, clock high, tw(CLKH)
Pulse duration, clock low, tw(CLKL)
Operating free-air temperature, TA
DRVDD = 3 V
DRVDD = 5 V
DRVDD = 5.25 V
DRVDD = 3 V
DRVDD = 5 V
DRVDD = 5.25 V
TLC876C
TLC876I
TLC876M
MIN NOM MAX UNIT
2.4
4
V
4.2
0.6
1V
1.05
50
ns
23
25
ns
23
25
ns
0
70
–40
85 °C
–55
125
electrical characteristics at AV_DD = DV_DD = 5 V, DRV_DD = 3.3 V, V_I(REFT) = 3.6 V, V_I(REFB) = 1.6 V,
f_CLK = 20 MSPS (unless otherwise noted)
power supply
PARAMETER
TEST CONDITIONS
MIN TYP
AVDD†
17
IDD
Operating supply current
DVDD†
2.7
DRVDD
25
PD
Power dissipation
107
PD(STBY) Standby power
CLK running
45
STBY = High
CLK inhibited at VDD or 0 V
15
† _{The voltage difference between AVDD and DVDD terminals cannot exceed 0.5 V to maintain performance specifications.}
digital logic inputs
PARAMETER
TEST CONDITIONS
MIN TYP
IIH
IIH
IIL
IIL(CLK)
Ci
High-level input current, STBY, OE
High-level input current, all other inputs
Low-level input current
Low-level input current, CLK
Input capacitance
DVDD = 5 V
DVDD = 5 V
DVDD = 5V
DVDD = 5V
–50
–10
5
MAX
25
5
100
150
85
35
MAX
1.9
10
50
10
UNIT
mA
mA
µA
mW
mW
UNIT
mA
µA
µA
µA
pF
logic outputs
PARAMETER
VOH High-level output voltage
VOL Low-level output voltage
Co Output capacitance
IOZ High-impedance-state output current
TEST CONDITIONS
IOH = 50 µA
IOH = 0.5 mA
IOL = 50 µA
IOL = 0.6 mA
DRVDD = 3 V
DRVDD = 5 V
DRVDD = 5 V
DRVDD = 3.6 V
DRVDD = 5.25 V
DRVDD = 5.25 V
MIN TYP MAX UNIT
2.4
3.8
V
2.4
0.7
1.05 V
0.4
5
pF
–10
10 µA
6
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