CC2550_06 Datasheet, PDF (6/55 Pages) Texas Instruments – Single Chip Low Cost Low Power RF Transmitter

CC2550
4.2 RF Transmit Section
Tc = 25°C, VDD = 3.0 V, 0 dBm if nothing else stated. All measurement results obtained using the CC2550EM reference
design.
Parameter
Min
Typ
Max Unit Condition/Note
Differential load
impedance
80 + j74
Ω Differential impedance as seen from the RF-port (RF_P
and RF_N) towards the antenna. Follow the CC2550EM
reference design available from the TI and Chipcon
websites.
Output power, highest
+1
setting
dBm Output power is programmable and is available across the
entire frequency band.
Delivered to 50 Ω single-ended load via CC2550EM
reference RF matching network.
Output power, lowest
–30
dBm Output power is programmable and is available across the
setting
entire frequency band.
Delivered to 50 Ω single-ended load via CC2550EM
reference RF matching network.
Adjacent channel
power
–19
dBc 1 MHz channel spacing (±1 MHz from carrier) and 500
kbps MSK.
Alternate channel
power
–39
dBc 1 MHz channel spacing (±2 MHz from carrier) and 500
kbps MSK.
Spurious emissions
25 MHz – 1 GHz
–36 dBm
47-74, 87.5-118, 174-
230, 470-862 MHz
–54 dBm
1800-1900 MHz
–47 dBm Restricted band in Europe
At 2·RF and 3·RF
–41 dBm Restricted bands in USA
Otherwise above 1
GHz
–30 dBm
Table 5: RF transmit parameters
4.3 Crystal Oscillator
Tc = 25°C, VDD = 3.0 V if nothing else stated.
Parameter
Crystal frequency
Tolerance
ESR
Start-up time
Min Typ Max Unit Condition/Note
26 26 27 MHz
±40
ppm This is the total tolerance including a) initial tolerance, b) crystal
loading, c) aging and d) temperature dependence.
The acceptable crystal tolerance depends on RF frequency and
channel spacing / bandwidth.
100 Ω
300
µs
Measured on CC2550 EM reference design.
Table 6: Crystal oscillator parameters
PRELIMINARY Data Sheet (Rev.1.2) SWRS039A
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