BQ2085 Datasheet, PDF (6/56 Pages) Texas Instruments – SBS-COMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311

bq2085
SLUS541 – OCTOBER 2002
SMBus TIMING SPECIFICATIONS
V_DD = 3.0 V to 3.6 V, T_A = –20°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
FSMB
FMAS
TBUF
THD:STA
TSU:STA
TSU:STO
THD:DAT
SMBus operating frequency
SMBus master clock frequency
Bus free time between start and stop
Hold time after (repeated) start
Repeated start setup time
Stop setup time
Data hold time
Slave mode, SMBC 50% duty cycle
Master mode, no clock low slave extend
Receive mode
Transmit mode
10
51.2
4.7
4.0
4.7
4.0
0
300
100 kHz
kHz
µs
µs
µs
µs
µs
TSU:DAT
TTIMEOUT
TLOW
THIGH
TLOW:SEXT
TLOW:MEXT
Data setup time
Error signal/detect
Clock low period
Clock high period
Cumulative clock low slave extend time
Cumulative clock low master extend time
See Note 5
See Note 6
See Note 7
See Note 8
250
µs
25
35 ms
4.7
µs
4.0
50 µs
25 ms
10 ms
TF
Clock/data fall time
TR
Clock/data rise time
See Note 9
See Note 10
300 ns
1000 ns
NOTES: 5. The bq2085 times out when any clock low exceeds TTIMEOUT
6. THIGH Max. is minimum bus idle time. SMBC = 1 for t > 50 µs causes reset of any transaction involving bq2085 that is in progress.
7. TLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.
8. TLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.
9. Rise time TR = (VILMAX – 0.15 V) to (VIHMIN + 0.15 V).
10. Fall time TF = 0.9 VDD to (VILMAX – 0.15 V).
DATA FLASH MEMORY SWITCHING CHARACTERISTICS
V_DD = 3.0 V to 3.6 V, T_A = –20°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
t(RETENSION) Data retention
See Note 11
Flash programming write-cycles
See Note 11
t(WORDPROG) Word programming time
I(DDPROG)
Flash-write supply current
NOTE 11: Specified by design. Not production tested.
See Note 11
See Note 11
Register Backup
PARAMETER
I(RBI)
RBI data-retention input current (see Note 12)
V(RBI)
RBI data-retention voltage
NOTE 12: Specified by design. Not production tested.
TEST CONDITIONS
VRB > 3.0 V, VDD < VIT
MIN TYP MAX UNIT
10
105
Years
Cycles
2 ms
14
16 mA
MIN TYP MAX UNIT
10 100 nA
1.3
V
6
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