TC246CYM-B0 Datasheet, PDF(5/27 Page) Texas Instruments – 680 x 500 PIXEL IMPACTRONTM COMPLEMENTARY COLOR CCD IMAGE SENSOR

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TC246CYM-B0 Datasheet, PDF (5/27 Pages) Texas Instruments – 680 x 500 PIXEL IMPACTRONTM COMPLEMENTARY COLOR CCD IMAGE SENSOR

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TC246CYM-B0

680 x 500 PIXEL IMPACTRONTM COMPLEMENTARY COLOR CCD IMAGE SENSOR

SOCS089 â MAY 2005

Terminal functions

Terminal name, No. I/O

Description

SUB

1,7,12,13,24

Chip substrate

SRG1

SRG2

CMG

RST

2 I Serial register gate-1

3 I Serial register gate-2

4 I Charge multiplication gate

5 I Reset gate

THER

6 I Thermistor (NTC: Negative Temperature Coefficient)

8 - No connection

VDD

OUT

VCLD

9 I Supply voltage for amplifiers

10 O Output signal, multiplier channel

Field plate (connect external capacitor)

14 I Supply voltage for Clearing drain & ESD protect circuits

SAG2

15 I Storage area gate-2

SAG1

P(-)

P(+)

IAG2

16 I Storage area gate-1

17,18 I Peltier cooler power supply - negative

19,20 I Peltier cooler power supply - positive

21 I Image area gate-2

IAG1

22 I Image area gate-1

ODB

23 I Supply voltage for anti-blooming drain

Detailed description

The TC246CYM consists of five basic functional blocks: The image-sensing area, the

imageâstorage area, the serial register, the charge multiplier, and the charge detection

node with buffer amplifier. The location of each of these blocks is identified in the

functional block diagram.

Image-sensing and storage areas

As light enters the silicon in the image-sensing area, electrons are generated and collected

in potential wells of the pixels. Color is accomplished by on-chip color mosaic filter. (see

the sensor topology diagram for a mapping of the color filter) Applying a suitable DC

bias to the antiblooming drain provides blooming protection. The electrons that exceed a

specific level, determined by the ODB bias, are drained away from the pixels. After the

integration cycle is completed by applying a PD-cell readout pulse to IAG2, charge is

transferred from the PD-cell into the V-cell and then quickly transferred into the storage

cell where it waits for readout. 2 lines can be summed together to implement the pseudo-

interlace scan.

TEXAS

INSTRUMENTS

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