TC246CYM-B0 Datasheet, PDF (2/27 Pages) Texas Instruments – 680 x 500 PIXEL IMPACTRONTM COMPLEMENTARY COLOR CCD IMAGE SENSOR

TC246CYM-B0
680 x 500 PIXEL IMPACTRON^TM COMPLEMENTARY COLOR CCD IMAGE SENSOR
SOCS089 – MAY 2005
The image-sensing area of the TC246CYM is configured into 500 lines with 680 pixels in
each line. 20 pixels are reserved in each line for dark reference. The blooming protection
is based on an advanced lateral overflow drain concept that does not reduce NIR
response. The frame interline transfer from the image sensing area to the memory area is
implemented to minimize image smear. After charge is integrated and stored in the
memory it is available for readout in the next cycle. This is accomplished by using a
unique serial register design that includes special charge multiplication pixels.
The TC246CYM sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase
CCD (SGVPCCD) technology, which provides devices with wide spectral response, high
quantum efficiency (QE), low dark current, and high response uniformity.
This MOS device contains limited built-in protection. During storage or handling, the device leads
should be shorted together or the device should be placed in conductive foam. In a circuit, unused
inputs should always be connected to Vss. Under no circumstances should pin voltages exceed
absolute maximum ratings. Avoid shorting OUT to Vss during operation to prevent damage to the
amplifier. The device can also be damaged if the output and ADB terminals are reverse-biased and
excessive current is allowed to flow. Specific guidelines for handling devices of this type are
contained in the publication “Guidelines for Handling Electrostatic-Discharge-Sensitive (ESD)
Devices and Assemblies” available from Texas Instruments.
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