SM74101 Datasheet, PDF (5/23 Pages) Texas Instruments – SM74101 Tiny 7A MOSFET Gate Driver

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SM74101
SNOSBA2B – JULY 2011 – REVISED MAY 2015
Electrical Characteristics (continued)
Over operating junction temperature range, V_CC = 12 V, INB = IN_REF = V_EE = 0V, No Load on output, unless otherwise
specified.
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
V_thL
HYS
Low Threshold
Input Hysteresis
0.8
1.35
2.0
V
400
mV
I_IL
Input Current Low
I_IH
Input Current High
OUTPUT DRIVER
R_OH
Output Resistance High
R_OL
Output Resistance Low
I_SOURCE Peak Source Current
I_SINK
Peak Sink Current
LATCHUP PROTECTION
IN = INB = 0V
IN = INB = V_CC
I_OUT = -10mA ⁽¹⁾
I_OUT = 10mA ⁽¹⁾
OUT = V_CC/2, 200ns pulsed current
OUT = V_CC/2, 200ns pulsed current
-1
0.1
1
µA
-1
0.1
1
µA
30
50
Ω
1.4
2.5
Ω
3
A
7
A
AEC–Q100, METHOD 004
T_J = 150°C
500
mA
(1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and
Bipolar devices.
6.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
Propagation Delay Time Low to
td1
High,
C_LOAD = 2 nF, see Figure 11 and Figure 12
IN/ INB rising ( IN to OUT)
Propagation Delay Time High to
td2
Low,
C_LOAD = 2 nF, see Figure 11 and Figure 12
IN / INB falling (IN to OUT)
tr
Rise time
tf
Fall time
C_LOAD = 2 nF , see Figure 11 and Figure 12
C_LOAD = 2 nF , see Figure 11 and Figure 12
TYP
MAX
UNIT
25
40
ns
25
40
ns
14
ns
12
ns
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