SM74101 Datasheet, PDF (11/23 Pages) Texas Instruments – SM74101 Tiny 7A MOSFET Gate Driver

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SM74101
SNOSBA2B – JULY 2011 – REVISED MAY 2015
Thermal Considerations (continued)
P_D = 0.118 + 0.008 + 0.012 = 0.138W.
(3)
We know that the junction temperature is given by
T_J = P_D x θ_JA + T_A
(4)
Or the rise in temperature is given by
T_RISE = T_J − T_A = P_D x θ_JA
(5)
For WSON-6 package, the integrated circuit die is attached to leadframe die pad which is soldered directly to the
printed circuit board. This substantially decreases the junction to ambient thermal resistance (θ_JA). By providing
suitable means of heat dispersion from the IC to the ambient through exposed copper pad, which can readily
dissipate heat to the surroundings, θ_JA as low as 40°C / Watt is achievable with the package. The resulting Trise
for the driver example above is thereby reduced to just 5.5 degrees.
Therefore T_RISE is equal to
T_RISE = 0.138 x 40 = 5.5°C
(6)
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