BQ27510-G1 Datasheet, PDF (5/39 Pages) Texas Instruments – System-Side Impedance Track™ Fuel Gauge With Direct Battery Connection

bq27510-G1
www.ti.com ..................................................................................................................................................................................................... SLUS927 – APRIL 2009
LOW FREQUENCY OSCILLATOR
T_A = –40°C to 85°C, C_REG = 0.47 µF, 2.45 V < V_REGIN = V_BAT < 5.5 V; typical values at T_A = 25°C and V_REGIN = V_BAT = 3.6 V
(unless otherwise noted)
f_OSC
f_EIO
t_SXO
PARAMETER
Operating frequency
Frequency error^{(1) (2)}
Start-up time⁽³⁾
TEST CONDITIONS
T_A = 0°C to 60°C
T_A = –20°C to 70°C
T_A = –40°C to 85°C
MIN
–1.5%
–2.5%
-4.0%
TYP
32.768
0.25%
0.25%
0.25%
MAX
1.5%
2.5%
4.0%
500
UNIT
KHz
µs
(1) The frequency drift is included and measured from the trimmed frequency at V_CC = 2.5 V, T_A = 25°C.
(2) The frequency error is measured from 32.768 KHz.
(3) The startup time is defined as the time it takes for the oscillator output frequency to be ±3% of typical oscillator frequency.
INTEGRATING ADC (COULOMB COUNTER) CHARACTERISTICS
T_A = –40°C to 85°C, C_REG = 0.47 µF, 2.45 V < V_REGIN = V_BAT < 5.5 V; typical values at T_A = 25°C and V_REGIN = V_BAT = 3.6 V
(unless otherwise noted)
V_{SR_IN}
t_{SR_CONV}
V_{SR_OS}
I_NL
Z_{SR_IN}
I_{SR_LKG}
PARAMETER
Input voltage range, V_(SRN) and V_(SRP)
Conversion time
Resolution
Input offset
Integral nonlinearity error
Effective input resistance⁽¹⁾
Input leakage current⁽¹⁾
TEST CONDITIONS
V_SR = V_(SRN) – V_(SRP)
Single conversion
MIN
–0.125
14
2.5
TYP
1
140
±0.007
MAX
0.125
15
±0.034
0.3
UNIT
V
s
bits
µV
FSR
MΩ
µA
(1) Assured by design. Not production tested.
ADC (TEMPERATURE AND CELL MEASUREMENT) CHARACTERISTICS
T_A = –40°C to 85°C, C_REG = 0.47 µF, 2.45 V < V_REGIN = V_BAT < 5.5 V; typical values at T_A = 25°C and V_REGIN = V_BAT = 3.6 V
(unless otherwise noted)
V_{ADC_IN}
t_{ADC_CONV}
V_{ADC_OS}
Z_ADC1
Z_ADC2
I_{ADC_LKG}
PARAMETER
Input voltage range
Conversion time
Resolution
Input offset
Effective input resistance (TS) ⁽¹⁾
Effective input resistance (BAT)⁽¹⁾
Input leakage current⁽¹⁾
TEST CONDITIONS
bq27510 not measuring cell voltage
bq27510 measuring cell voltage
MIN TYP MAX UNIT
–0.2
1V
125 ms
14
15 bits
1
mV
8
MΩ
8
MΩ
100
kΩ
0.3 µA
(1) Assured by design. Not production tested.
DATA FLASH MEMORY CHARACTERISTICS
T_A = –40°C to 85°C, C_REG = 0.47µF, 2.45 V < V_REGIN = V_BAT < 5.5 V; typical values at T_A = 25°C and V_REGIN = V_BAT = 3.6 V
(unless otherwise noted)
t_DR
t_WORDPROG)
I_CCPROG)
PARAMETER
Data retention⁽¹⁾
Flash programming write-cycles ⁽¹⁾
Word programming time⁽¹⁾
Flash-write supply current⁽¹⁾
TEST CONDITIONS
MIN
10
20,000
TYP MAX UNIT
Years
Cycles
2 ms
5
10 mA
(1) Assured by design. Not production tested.
Copyright © 2009, Texas Instruments Incorporated
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