MSP430X43X Datasheet, PDF (46/64 Pages) Texas Instruments – Mixed signal microcontroller

MSP430x43x, MSP430x44x
MIXED SIGNAL MICROCONTROLLER
SLAS344B – JANUARY 2002 – REVISED OCTOBER 2002
JTAG, program memory and fuse
PARAMETER
TEST CONDITIONS
MIN NOM MAX UNIT
f(TCK)
JTAG/Test
(see Note 4)
VCC(FB)
V(FB)
I(FB)
JTAG/fuse
(see Note 2)
TCK frequency
Pull-up resistors on TMS, TCK, TDI (see Note 1)
Supply voltage during fuse blow condition,
TA = 25°C
Fuse-blow voltage, F versions (see Note 3)
Supply current on TDI with fuse blown
Time to blow the fuse
VCC = 2.2 V
VCC = 3 V
VCC = 2.2 V/3 V
DC
5
MHz
DC
10
25
60
90 kΩ
2.5
V
6
7
100 mA
1 ms
I(DD-PGM) _{F-versions only} Current from DVCC when programming is active VCC = 2.7 V/3.6 V
3
I(DD-Erase) ^{(see Note 4)}
Current from DVCC when erase is active
VCC = 2.7 V/3.6 V
3
t(retention)
Write/erase cycles
F-versions only
Data retention TJ = 25°C
104 105
100
5 mA
5 mA
cycles
years
NOTES:
1. TMS, TDI, and TCK pull-up resistors are implemented in all F versions.
2. Once the fuse is blown, no further access to the MSP430 JTAG/test feature is possible. The JTAG block is switched to bypass mode.
3. The supply voltage to blow the fuse is applied to the TDI pin.
4. f(TCK) may be restricted to meet the timing requirements of the module selected. Duration of the program/erase cycle is determined
by f(FTG) applied to the flash timing controller. It can be calculated as follows:
t(word _write) = 35 1/f(FTG)
t(block _{write, byte 0)} = 30 1/f(FTG)
t(block _{write, byte 1 – 63)} = 20 1/f(FTG)
t(block _{write, sequence end)} = 6 1/f _(FTG)
t(mass _erase) = 5297 1/f(FTG)
t(segment _erase) = 4819 1/f(FTG)
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