STB13NK60Z_05 Datasheet, PDF (4/25 Pages) STMicroelectronics – N-CHANNEL 600V-0.48Ω-13A-TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET

UCC1895
UCC2895
UCC3895
SLUS157L − DECEMBER 1999 − REVISED APRIL 2008
ELECTRICAL CHARACTERISTICS VDD = 12 V, RT = 82 kΩ, CT = 220 pF, RDELAB = 10 kΩ, RDELCD = 10 kΩ, CREF = 0.1 µF,
CVDD = 0.1 µF and no load on the outputs, TA = TJ. TA = 0°C to 70°C for UCC3895x, TA = −40°C to 85°C for UCC2895x and TA = −55°C to 125°C
for the UCC1895x. (unless otherwise noted)
PARAMETER
UVLO (UNDERVOLTAGE LOCKOUT)
UVLO(on)
UVLO(off)
Start-up voltage threshold
Minimum operating voltage after
start-up
UVLO(hys)
SUPPLY
Hysteresis
ISTART
Start-up current
IDD
Operating current
VDD_CLAMP VDD clamp voltage
VOLTAGE REFERENCE
VREF
Output voltage
ISC
Short circuit current
ERROR AMPLIFIER
Common-mode input voltage range
VIO
IBIAS
Offset voltage
Input bias current (EAP, EAN)
EAOUT_VOH High-level output voltage
EAOUT_VOL Low-level output voltage
ISOURCE
ISINK
AVOL
GBW
Error amplifier output source current
Error amplifier output sink current
Open-loop dc gain
Unity gain bandwidth(1)
Slew rate(1)
No-load comparator turn-off
threshold
No-load comparator turn-on
threshold
No-load comparator hysteresis
OSCILLATOR
fOSC
Frequency
Frequency total variation(1)
VIH_SYNC
VOH_SYNC
VOL_SYNC
SYNC input threshold, SYNC
High-level output voltage, SYNC
Low-level output voltage, SYNC
Sync output pulse width
VRT
Timing resistor voltage
VCT(peak) Timing capacitor peak voltage
VCT(valley) Timing capacitor valley voltage
(1) _{Ensured by design. Not production tested.}
TEST CONDITIONS
VDD = 8 V
IDD = 10 mA
TJ = 25°C
10 V < VDD < VDD_CLAMP,
0 mA < IREF < 5 mA,
temperature
REF = 0 V,
TJ = 25°C
EAP−EAN = 500 mV, IEAOUT = −0.5 mA
EAP−EAN = −500 mV, IEAOUT = 0.5 mA
EAP−EAN = 500 mV, EAOUT = 2.5 V
EAP−EAN = −500 mV, EAOUT = 2.5 V
1 V < EAN < 0 V,
EAP = 500 mV
0.5 V < EAOUT < 3.0 V
TJ = 25°C
Over line, temperature
ISYNC = −400 µA, VCT = 2.6 V
ISYNC = 100 µA,
VCT = 0.0 V
LOADSYNC = 3.9 kΩ and 30 pF in parallel
MIN TYP MAX UNITS
10.2
11 11.8
8.2
9 9.8
V
1.0 2.0 3.0
150 250 µA
5
6 mA
16.5 17.5 18.5 V
4.94 5.00 5.06
V
4.85
5 5.15
10
20
mA
−0.1
3.6
V
−7
7 mV
−1
1 µA
4.0 4.5 5.0
V
0 0.2 0.4
1.0 1.5
mA
2.5 4.5
75
85
dB
5.0 7.0
MHz
1.5 2.2
V/µs
0.45 0.50 0.55
0.55 0.60 0.69
V
0.035 0.10 0.165
473 500 527 kHz
2.5% 5%
2.05 2.10 2.40
4.1 4.5 5.0
V
0.0 0.5 1.0
85 135 ns
2.9
3 3.1
2.25 2.35 2.55
V
0.0 0.2 0.4
4
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