OPA2316 Datasheet, PDF (4/46 Pages) Texas Instruments – OPAx316 10-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

OPA316, OPA2316, OPA2316S, OPA4316
SBOS703D – APRIL 2014 – REVISED DECEMBER 2014
www.ti.com
NAME
+IN
+IN A
+IN B
+IN C
+IN D
–IN
–IN A
–IN B
–IN C
–IN D
OUT
OUT A
OUT B
OUT C
OUT D
SHDN A
SHDN B
V+
V–
OPA316
DBV
DCK
3
1
—
—
—
—
—
—
—
—
4
3
—
—
—
—
—
—
—
—
1
4
—
—
—
—
—
—
—
—
—
—
—
—
5
5
2
2
PIN
OPA2316
D, DGK, DRG
—
3
5
—
—
—
2
6
—
—
—
1
7
—
—
—
—
8
4
Pin Functions
OPA2316S
DGS
—
3
7
—
—
—
2
8
—
—
—
1
9
—
—
5
6
10
4
OPA4316
PW
—
3
5
10
12
—
2
6
9
13
—
1
7
8
14
—
—
4
11
DESCRIPTION
Noninverting input
Noninverting input
Noninverting input
Noninverting input
Noninverting input
Inverting input
Inverting input
Inverting input
Inverting input
Inverting input
Output
Output
Output
Output
Output
Shutdown (logic low), enable (logic high)
Shutdown (logic low), enable (logic high)
Positive supply
Negative supply or ground (for single-supply operation)
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature (unless otherwise noted)⁽¹⁾
Supply voltage
Voltage ⁽²⁾
Signal input pins
Current ⁽²⁾
Output short-circuit⁽³⁾
Common-mode
Differential
T_A
Operating temperature
T_J
Junction temperature
T_stg
Storage temperature
MIN
MAX
7
(V–) – 0.5
(V+) + 0.5
(V+) – (V–) + 0.2
–10
10
Continuous
–55
150
150
–65
150
UNIT
V
V
V
mA
mA
°C
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input pins are diode-clamped to the power-supply rails. Current limit input signals that can swing more than 0.5 V beyond the supply
rails to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.
6.2 ESD Ratings
over operating free-air temperature range (unless otherwise noted)
V_(ESD)
Electrostatic ^{Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)}
discharge
Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾
VALUE
±4000
±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
4
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