BQ24600_1 Datasheet, PDF (4/31 Pages) Texas Instruments – Stand-Alone Synchronous Switch-Mode Li-Ion or Li-Polymer Battery Charger with Low Iq

bq24600
SLUS891 – FEBRUARY 2010
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
5.0V ≤ V(VCC) ≤ 28V, 0°C < T_J < +125°C, typical values are at T_A = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
CURRENT REGULATION – FAST CHARGE
V_ISET
V_{IREG_CHG}
K_ISET
ISET voltage range
SRP-SRN current sense voltage range
Charge current set factor (Amps of
charge current per volt on ISET pin)
V_{IREG_CHG} = V_SRP – V_SRN
R_SENSE = 10 mΩ
2V
100 mV
5
A/V
Charge current regulation accuracy
I_ISET
Leakage current into ISET pin
CURRENT REGULATION – PRECHARGE
V_{IREG_CHG} = 40 mV
V_{IREG_CHG} = 20 mV
V_{IREG_CHG} = 5 mV
V_{IREG_CHG} = 1.5 mV (V_SRN > 3.1V)
V_ISET = 2 V
–3%
–4%
–25%
–40%
3%
4%
25%
40%
100 nA
Precharge current range
R_SENSE = 10 mΩ
I_CHARGE
/10
A
K_PRECH
Precharge current set factor (Amps of
precharge current per volt on ISET pin)
R_SENSE = 10 mΩ
0.5
A/V
Precharge current regulation accuracy
CHARGE TERMINATION
V_{IREG_PRECH} = 10 mV
V_{IREG_PRECH} = 5 mV
V_{IREG_PRECH} = 1.5 mV (V_SRN < 3.1V)
–10%
–25%
–55%
10%
25%
55%
Termination current range
R_SENSE = 10 mΩ
I_CHARGE
/10
A
K_TERM
Termination current set factor (Amps of
Termination current per volt on ISET
pin)
R_SENSE = 10 mΩ
0.5
A/V
V_ITERM = 10 mV
Termination current accuracy
V_ITERM = 5 mV
V_ITERM = 1.5 mV
Deglitch time for termination (both edge)
–10%
–25%
–45%
100
10%
25%
45%
ms
t_QUAL
Termination qualification time
V_BAT > V_RECH and I_CHARGE < I_TERM
I_QUAL
Termination qualification current
Discharge current once termination is detected
INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO)
250
ms
2
mA
V_UVLO
AC under-voltage rising threshold
V_{UVLO_HYS}
AC under-voltage hysteresis, falling
VCC LOWV COMPARATOR
Measure on VCC
3.65 3.85
350
4V
mV
Falling threshold, disable charge
Measure on VCC
4.1
V
Rising threshold, resume charge
4.35
4.5 V
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
V_{SLEEP _FALL}
V_{SLEEP_HYS}
SLEEP falling threshold
SLEEP hysteresis
SLEEP rising delay
V_VCC – V_SRN to enter SLEEP
VCC falling below SRN, delay to pull up PG
40
100
500
1
150 mV
mV
µs
SLEEP falling delay
VCC rising above SRN, delay to pull down PG
30
ms
SLEEP rising shutdown deglitch
VCC falling below SRN, Delay to enter SLEEP mode
100
ms
SLEEP falling powerup deglitch
VCC rising above SRN, Delay to come out of SLEEP
mode
30
ms
BAT LOWV COMPARATOR
V_LOWV
Precharge to fastcharge transition
(LOWV Threshold)
Measured on VFB pin
1.534 1.55
1.566 V
V_{LOWV_HYS}
LOWV hysteresis
LOWV rising deglitch
VFB falling below Vlowv
100
mV
25
ms
LOWV falling deglitch
VFB rising above Vlowv + V_{LOWV_HYS}
25
ms
4
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