BQ24152 Datasheet, PDF (4/38 Pages) Texas Instruments – Fully Integrated Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and USB-OTG Support

bq24152
SLUS847 – JUNE 2008 ...................................................................................................................................................................................................... www.ti.com
RECOMMENDED OPERATING CONDITIONS
V_BUS
T_J
Supply voltage, VBUS
Operating junction temperature range
MIN
NOM
4
0
MAX
6 ⁽¹⁾
+125
UNIT
V
°C
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOT or SW pins. A tight
layout minimizes switching noise.
ELECTRICAL CHARACTERISTICS
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (charger mode operation), T_J = 0°C to 125°C, T_J = 25°C for
typical values (unless otherwise noted)
PARAMETER
INPUT CURRENTS
I_(VBUS)
VBUS supply current control
I_lkg
Leakage current from battery to
VBUS pin
Battery discharge current in High
Impedance mode, (CSIN,
CSOUT, AUXPWR, SW pins)
VOLTAGE REGULATION
V_(OREG)
Output charge voltage
Voltage regulation accuracy
TEST CONDITIONS
VBUS > VBUS(min), PWM switching
VBUS > VBUS(min), PWM NOT switching
0°C < T_J < 85°C, VBUS = 5 V, HZ_MODE = 1,
V_(AUXPWR) > V_(LOWV), SCL, SDA, OTG = 0 V or
1.8 V
0°C < T_J < 85°C, VBUS = 5 V, HZ_MODE = 1,
V_(AUXPWR) < V_(LOWV), 32 S mode, SCL, SDA, OTG
= 0 V or 1.8 V
0°C < T_J < 85°C, V_(AUXPWR) = 4.2 V, High
impedance mode
0°C < T_J < 85°C, V_(AUXPWR) = 4.2 V, High
impedance mode
SCL, SDA, OTG = 0 V or 1.8 V
Operating in voltage regulation, programmable
T_A = 25°C
CURRENT REGULATION (FAST CHARGE)
I_O(CHARGE)
Output charge current
Regulation accuracy for charge
current across R_(SNS)
V_(IREG) = I_O(CHARGE) × R_(SNS)
WEAK BATTERY DETECTION
V_(LOWV)
Weak battery voltage threshold
Weak battery voltage accuracy
Hysteresis for V_(LOWV)
Deglitch time for weak battery
threshold
OTG PIN LOGIC LEVEL
V_IL
Input low threshold level
V_IH
Input high threshold level
CHARGE TERMINATION DETECTION
I_(TERM)
Termination charge current
Deglitch time for charge
termination
Voltage regulation accuracy for
termination current across R_(SNS)
V_{(IREG_TERM)} = I_O(TERM) × R_(SNS)
INPUT POWER SOURCE DETECTION
Input voltage lower limit
V_IN(min)
t_INT
Deglitch time for VBUS rising
above V_IN(min)
Hysteresis for V_IN(min)
Detection Interval
V_(LOWV) ≤ V_(AUXPWR) < V_(OREG), VBUS > V_(SLP),
R_(SNS) = 68 mΩ Programmable
20 mV ≤ V_(IREG) ≤ 40 mV
40 mV < V_(IREG)
Programmable
Battery voltage falling
Rising voltage, 2 mV overdrive, t_RISE = 100 ns
V_(AUXPWR) > V_(OREG) – V_(RCH),
VBUS > V_(SLP), R_(SNS) = 68 mΩ Programmable
Both rising and falling, 2 mV overdrive, t_RISE, t_FALL
= 100 ns
3 mV ≤ V_{(IREG_TERM)} < 20 mV
20 mV ≤ V_{(IREG_TERM)} ≤ 40 mV
Input power source detection
Rising voltage, 2 mV overdrive, t_RISE = 100 ns
Input voltage rising
Input power source detection
MIN
3.5
–0.5%
550
–5%
–3%
3.4
–5%
1.3
50
–25%
–5%
3.6
100
TYP
MAX UNIT
10
mA
5
20 µA
35 µA
5 µA
20 µA
±1%
4.44 V
0.5%
1250 mA
5%
3%
3.7 V
5%
100
mV
30
ms
0.4 V
V
400 ^mA
30
ms
25%
5%
3.8
4V
30
ms
200 mV
2
S
4
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