MSP430G2X21 Datasheet, PDF (34/61 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430G2x21, MSP430G2x31
MIXED SIGNAL MICROCONTROLLER
SLAS694B -- FEBRUARY 2010 -- REVISED MAY 2010
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST CONDITIONS
V_CC
MIN TYP MAX UNIT
V_CC(PGM/
ERASE)
Program and Erase supply voltage
2.2
3.6 V
f_FTG
Flash Timing Generator frequency
257
476 kHz
I_PGM
Supply current from V_CC during program
2.2 V/3.6 V
1
5 mA
I_ERASE
Supply current from V_CC during erase
2.2 V/3.6 V
1
7 mA
t_CPT
Cumulative program time (see Note 1)
2.2 V/3.6 V
10 ms
t_CMErase
Cumulative mass erase time
Program/Erase endurance
2.2 V/3.6 V
20
10⁴
10⁵
ms
cycles
t_Retention
Data retention duration
T_J = 25°C
100
years
t_Word
Word or byte program time
30
t_{Block, 0}
Block program time for 1^st byte or word
25
t_{Block, 1-63}
t_{Block, End}
Block program time for each additional byte or word
see Note 2
Block program end-sequence wait time
18
6
t_FTG
t_{Mass Erase}
Mass erase time
10593
t_{Seg Erase}
Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (t_FTG = 1/f_FTG).
RAM
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
V_(RAMh)
RAM retention supply voltage (see Note 1)
CPU halted
1.6
V
NOTE 1: This parameter defines the minimum supply voltage V_CC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
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