OPA2614ID Datasheet, PDF (3/34 Pages) Texas Instruments – Dual, High Gain Bandwidth, High Output Current Operational Amplifier with Current Limit

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OPA2614
SBOS305D − JUNE 2004 − REVISED AUGUST 2008
ELECTRICAL CHARACTERISTICS: V_S = ±6V
Boldface limits are tested at +25°C.
R_F = 453Ω, R_L = 100Ω, and G = +4, unless otherwise noted. See Figure 1 for AC performance only.
OPA2614ID
PARAMETER
TEST CONDITIONS
TYP
+25°C
MIN/MAX OVER TEMPERATURE
0°C to −40°C to
+25°C⁽¹⁾ +70°C⁽²⁾ +85°C⁽²⁾ UNITS
MIN/
MAX
TEST
LEVEL
(3)
AC Performance (see Figure 1)
Small-Signal Bandwidth
Gain-Bandwidth Product
Bandwidth for 0.1dB Gain Flatness
Peaking at a Gain of +2
Large-Signal Bandwidth
Slew Rate
Rise-and-Fall Time
Settling Time to 0.02%
0.1%
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
Input Current Noise
Channel-to-Channel Crosstalk
DC Performance⁽⁴⁾
Open-Loop Gain (A_OL)
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Average Bias Current Drift (Magnitude)
Input Offset Current
Average Offset Bias Current Drift
Input
Common-Mode Input Range (CMIR)⁽⁵⁾
Common-Mode Rejection Ratio (CMRR)
Input Impedance
Differential-Mode
Common-Mode
Output
Output Voltage Swing
Current Output, Sourcing
Current Output, Sinking
Short-Circuit Current
Closed-Loop Output Impedance
G = +2, V_O = 0.1V_PP
G = +4, V_O = 0.1V_PP
G = +8, V_O = 0.1V_PP
G ≥ 20
G = +4, V_O < 0.1V_PP
V_O < 0.1V_PP
G = +4, V_O = 2V_PP
G = +4, 4V Step
G = +4, V_O = 0.2V Step
G = +4, V_O = 2V Step
G = +4, V_O = 2V Step
G = +4, f = 1MHz, V_O = 2V_PP
R_L = 20Ω
R_L ≥ 500Ω
R_L = 20Ω
R_L ≥ 500Ω
f > 10kHz
f > 10kHz
f = 1MHz, Input-Referred
V_O = 0V, R_L = 100Ω
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = 0V
V_CM = ±1V
V_CM = 0
V_CM = 0
No Load
100Ω
V_O = 0, Linear Operation
V_O = 0, Linear Operation
Output Shorted to Ground
G = +2, f = 100kHz
180
100
40
290
50
6
42
145
3.5
30
26
−65
−92
−87
−110
1.8
1.7
−68
97
±0.2
−6
±50
80
32
218
116
4.4
37
32
−62
−90
−82
−104
2.0
2.1
92
±1.0
−12
±300
±4.7
±4.5
100
88
18 0.6
7 1
±5.0
±4.9
+350
−350
500
0.01
±4.8
±4.7
+280
−280
75
29
196
114
5.0
39
34
−61
−88
−80
−102
2.1
2.2
92
±1.15
±3.3
−13
−30
±520
±5
±4.5
87
±4.8
±4.7
+240
−240
MHz typ
C
72
MHz min
B
28
MHz min
B
190
MHz min
B
MHz typ
C
dB
typ
C
MHz typ
C
112
V/µs min
B
5.2
ns
typ
C
40
ns
typ
C
35
ns
typ
C
−60
dBc
max
B
−87
dBc
max
B
−78
dBc
max
B
−100
dBc
max
B
2.3
nV/√Hz max
B
2.4
pA/√Hz max
B
dBc
typ
C
91
dB
min
A
±1.2
mV
max
A
±3.3
µV/°C max
B
−14.5
µA
max
A
−35
nA/°C max
B
±750
nA
max
A
±7
nA/°C max
B
±4.4
V
min
A
86
dB
min
A
kΩ pF typ
C
MΩ pF typ
C
±4.7
±4.6
+220
−220
V
min
A
V
min
A
mA
min
A
mA
min
A
mA
typ
C
Ω
typ
C
(1) _{Junction temperature = ambient for +25°C tested specifications.}
(2) _{Junction temperature = ambient at low temperature limit; junction temperature = ambient +23°C at high temperature limit for over temperature}
tested specifications.
(3) _{Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and}
simulation. (C) Typical value only for information.
(4) _{Current is considered positive-out-of-node. VCM is the input common-mode voltage.}
(5) _{Tested < 3dB below minimum CMRR specification at ± CMIR limits.}
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