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DRV411_15 Datasheet, PDF (3/34 Pages) Texas Instruments – Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors
DRV411
www.ti.com
SBOS693B – AUGUST 2013 – REVISED DECEMBER 2013
ELECTRICAL CHARACTERISTICS
At TA = +25°C, VDD = +2.7 V to +5.5 V, and zero output current ICOMP, unless otherwise noted.
DRV411
PARAMETER
TEST CONDITIONS
MIN
TYP
HALL ELEMENT EXCITATION / AMPLIFICATION
VEX
IEX
fspin
AOLFB
AOL
Hall sensor excitation voltage
Hall sensor excitation current
Excitation switching frequency
Front-end open-loop flatband gain
Front-end open-loop gain
TA= –40°C to +125°C, GSEL [00,01,10]
TA= –40°C to +125°C, GSEL [1,1]
TA= –40°C to +125°C
GSEL [0,0](1), fZero = 3.8 kHz
GSEL [0,1], fZero = 7.2 kHz
GSEL [1,0], fZero = 3.8 kHz
TA= –40°C to +125°C,
GSEL [00,01,10,11]
0.7
0.8
0.6
0.74
1
250
250
1000
94
120
No Hall sensor, GSEL [00, 01, 10]
20
VOS_FE
Front-end voltage offset
GSEL [1,1]
5
dVOS_FE/dT Front-end voltage offset drift
TA= –40°C to +125°C, no Hall sensor,
GSEL [00,01,10]
0.2
TA= –40°C to +125°C, GSEL [1,1]
5
GBWP
Gain-bandwidth product
GSEL [1,1]
14
CMRR
Common-mode-rejection ratio
GSEL [1,1], VCM = 0 V to VDD – 1.8 V
300
Error comparator threshold
75
DIFFERENTIAL AMPLIFIER
VOS
Input offset voltage, RTO(2) (3)
dVOS/dT
Input offset voltage drift, RTO
CMRR
vs common-mode voltage, RTO
PSRR
vs power-supply, RTO
VCM
Common-mode input range
Differential impedance
VIN1 = VIN2 = VREFIN
TA= –40°C to +125°C
VCM = −1 V to VDD + 1 V, VREF = VDD / 2
VDD = +2.7 V to +5.5 V, VCM = VREFIN
±0.01
±0.4
±50
±4
–1
16.5
20
Common-mode impedance
40
50
External reference input impedance
40
50
G
GERR
Gain, VOUT/VIN_DIFF
Gain error
Gain error drift
Linearity error
Voltage output swing from negative rail(3)
(OR pin trip level)
TA= –40°C to +125°C
TA= –40°C to +125°C
RL = 1 kΩ
I = +2.5 mA, VDD = 5 V, comparator trip
level
4
±0.02%
±1
12
48
Voltage output swing from positive rail(3)
(OR pin trip level)
I = –2.5 mA, VDD = 5 V, comparator trip
level
VDD – 85
VDD – 48
ISC
Short-circuit current(3)
VOUT connected to GND
VOUT connected to VDD
Signal overrange indication delay
(OR pin)(3)
VIN = 1-V step, see note (3)
–18
20
2.5 to 3.5
BW–3dB
Bandwidth (3)
2
SR
Slew rate
6.5
Settling time large-signal(3)
ΔV = ± 2 V to 1%, no external filter
0.9
Settling time(3)
ΔV = ± 0.4 V to 0.01%
8
en
Output voltage noise density, RTO(3)
f = 1 kHz, compensation loop disabled
170
MAX UNIT
0.95
V
0.95
V
10
mA
MHz
V/V
V/V
V/V
dB
100
µV
12
mV
µV/°C
µV/°C
MHz
µV/V
mV
±0.1
±2
±250
±50
VDD + 1
23.5
60
60
±0.3%
±5
85
mV
µV/°C
µV/V
µV/V
V
kΩ
kΩ
kΩ
V/V
ppm/°C
ppm
mV
mV
mA
mA
µs
MHz
V/µs
µs
µs
nV/√Hz
(1) Note that the numbers in the brackets correspond to the GSEL number and its value. For example, in this case, GSEL [0,0] means that
GSEL1 = 0 and GSEL2 = 0.
(2) Parameter value referred to output (RTO).
(3) See Typical Characteristic curves.
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