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DAC8812 Datasheet, PDF (3/18 Pages) Texas Instruments – Dual, Serial Input 16-Bit Multiplying Digital-to-Analog Converter
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DAC8812
www.ti.com
SBAS349A – AUGUST 2005 – REVISED DECEMBER 2005
ELECTRICAL CHARACTERISTICS(1)
VDD = 2.7 V to 5.5 V, IOUTX = Virtual GND, AGNDX = 0 V, VREFA, B = 10 V, TA = full operating temperature range, unless
otherwise noted.
PARAMETER
STATIC PERFORMANCE(2)
Resolution
SYMBOL
Relative accuracy
INL
Differential nonlinearity
DNL
Output leakage current
Full-scale gain error
Full-scale tempco(3)
Feedback resistor
REFERENCE INPUT
VREFX range
Input resistance
Input resistance match
Input capacitance(3)
ANALOG OUTPUT
Output current
Output capacitance(3)
LOGIC INPUTS AND OUTPUT
IOUTX
GFSE
TCVFS
RFBX
VREFX
RREFX
RREFX
CREFX
IOUTX
COUTX
Input low voltage
VIL
Input high voltage
Input leakage current
Input capacitance(3)
Logic output low voltage
Logic output high voltage
INTERFACE TIMING(3),(4)
Clock width high
Clock width low
CS to Clock setup
Clock to CS hold
Clock to SDO prop delay
Load DAC pulsewidth
Data setup
Data hold
Load setup
Load hold
VIH
IIL
CIL
VOL
VOH
tCH
tCL
tCSS
tCSH
tPD
tLDAC
tDS
tDH
tLDS
tLDH
CONDITIONS
DAC8812B
DAC8812C
DAC8812
Data = 0000h, TA = +25°C
Data = 0000h, TA = TA max
Data = FFFFh
VDD = 5 V
Channel-to-channel
Data = FFFFh
Code-dependent
VDD = +2.7 V
VDD = +5 V
VDD = +2.7 V
VDD = +5 V
IOL = 1.6 mA
IOH = 100 µA
DAC8812
MIN TYP MAX
UNIT
±0.75
1
5
16
Bits
±2
LSB
±1
LSB
±1
LSB
10
nA
20
nA
±4
mV
ppm/°C
kΩ
–15
15
V
4
5
6
kΩ
1
%
5
pF
1.6
50
2.5
mA
pF
0.6
V
0.8
V
2.1
V
2.4
V
1
µA
10
pF
0.4
V
4
V
25
ns
25
ns
0
ns
25
ns
2
20
ns
25
ns
20
ns
20
ns
5
ns
25
ns
(1) Specifications subject to change without notice.
(2) All static performance tests (except IOUT) are performed in a closed-loop system using an external precision OPA277 I-to-V converter
amplifier. The DAC8812 RFB terminal is tied to the amplifier output. Typical values represent average readings measured at +25°C.
(3) These parameters are specified by design and not subject to production testing.
(4) All input control signals are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V.
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