MSP430G2X11_11 Datasheet, PDF (27/47 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430G2x11
MSP430G2x01
www.ti.com
SLAS695D – FEBRUARY 2010 – REVISED FEBRUARY 2011
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
V_CC
MIN TYP MAX UNIT
V_{CC(PGM/ERASE)}
f_FTG
I_PGM
I_ERASE
t_CPT
t_CMErase
Program and erase supply voltage
Flash timing generator frequency
Supply current from V_CC during program
Supply current from V_CC during erase
Cumulative program time⁽¹⁾
Cumulative mass erase time
Program/erase endurance
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2
3.6 V
257
476 kHz
1
5 mA
1
7 mA
10 ms
20
10⁴ 10⁵
ms
cycles
t_Retention
t_Word
t_{Block, 0}
t_{Block, 1-63}
t_{Block, End}
t_{Mass Erase}
t_{Seg Erase}
Data retention duration
Word or byte program time
Block program time for first byte or word
Block program time for each additional byte or
word
Block program end-sequence wait time
Mass erase time
Segment erase time
T_J = 25°C
(2)
(2)
(2)
(2)
(2)
(2)
100
30
25
18
6
10593
4819
years
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2) These values are hardwired into the Flash Controller's state machine (t_FTG = 1/f_FTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
V_(RAMh)
PARAMETER
RAM retention supply voltage ⁽¹⁾
TEST CONDITIONS
MIN
CPU halted
1.6
MAX
UNIT
V
(1) This parameter defines the minimum supply voltage V_CC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
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