AMC1100_15 Datasheet, PDF (20/33 Pages) Texas Instruments – AMC1100 Fully-Differential Isolation Amplifier

AMC1100
SBAS562A – APRIL 2012 – REVISED DECEMBER 2014
10 Layout
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10.1 Layout Guidelines
A layout recommendation showing the critical placement of the decoupling capacitors that be placed as close as
possible to the AMC1100 while maintaining a differential routing of the input signals is shown in Figure 40.
To maintain the isolation barrier and the common-mode transient immunity (CMTI) of the device, keep the
distance between the high-side ground (GND1) and the low-side ground (GND2) at a maximum; that is, the
entire area underneath the device must be kept free of any conducting materials.
10.2 Layout Example
Top View
VDD1
VDD2
To Shunt
12 W
SMD 0603
12 W
SMD 0603
330 pF
SMD
0603
0.1 mF
SMD
1206
VINP
VINN
Device
VOUTP
VOUTN
0.1mF
0.1 mF
SMD
S1M206D
1206
To Filter or ADC
GND1
GND2
LEGEND
Top layer; copper pour and traces
High-side area
Controller-side area
Via
Clearance area.
Keep free of any
conductive materials.
Figure 40. Example Layout
20
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