THS7353 Datasheet, PDF (2/51 Pages) Texas Instruments – 3-Channel Low Power Video Buffer with I2C Control, Selectable Filters, External Gain Control, 2:1 Input MUX, and Selectable Input Modes

THS7353
SLOS484 – NOVEMBER 2005
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
DESCRIPTION (CONTINUED)
As part of the THS7353 flexibility, the 2:1 MUX input can be selected for ac or dc coupled inputs. The ac coupled
modes include a sync-tip clamp option for CVBS/Y'/G'B'R' with sync or a fixed bias for the C'/P'_B/P'_R channels.
The dc input options include a dc input or a dc + 250-mV input offset shift to allow for a full sync dynamic range
at the output with 0-V input.
The THS7353 is the perfect choice for all video buffer applications. The 16.2-mA total quiescent current (54 mW
total power) makes it an excellent choice for USB powered or portable video applications. While fully disabled,
the THS7353 consumes less than 1 µA.
PACKAGING/ORDERING INFORMATION
PACKAGED DEVICES⁽¹⁾
THS7353PW
THS7353PWR
PACKAGE TYPE
TSSOP-20
TRANSPORT MEDIA,
QUANTITY
Rails, 70
Tape and reel, 2000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)⁽¹⁾
V_SS Supply voltage, V_S+ to GND
V_I
Input voltage
I_O
Output current
Continuous power dissipation
T_J
Maximum junction temperature, any condition⁽²⁾
T_J
Maximum junction temperature, continuous operation, long term reliability⁽³⁾
T_stg Storage temperature range
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
HBM
ESD ratings CDM
MM
UNIT
5.5 V
–0.4 V to V_S+
±125 mA
See Dissipation Rating Table
150°C
125°C
–65°C to 150°C
300°C
1500 V
2000 V
100 V
(1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.
(2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
2