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BQ24230 Datasheet, PDF (2/33 Pages) Texas Instruments – USB-FRIENDLY LITHIUM-ION BATTERY CHARGER AND POWER-PATH MANAGEMENT IC
bq24230
bq24232
SLUS821A – OCTOBER 2008 – REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION (CONTINUED)
The battery is charged in three phases: conditioning, constant current, and constant voltage. In all charge
phases, an internal control loop monitors the IC junction temperature and reduces the charge current if the
internal temperature threshold is exceeded.
The charger power stage and charge current sense functions are fully integrated. The charger function has
high-accuracy current and voltage regulation loops, charge status display, and charge termination. The input
current limit and charge current are programmable using external resistors.
ORDERING INFORMATION
PART
NUMBER (1)(2)
bq24230RGTR
bq24230RGTT
bq24232RGTR
bq24232RGTT
VOVP
6.6 V
6.6 V
10.5 V
10.5 V
VOUT(REG)
4.4 V
4.4 V
4.4 V
4.4 V
VDPM
VO(REG) – 100 mV
VO(REG) – 100 mV
VO(REG) – 100 mV
VO(REG) – 100 mV
OPTIONAL
FUNCTION
TD
TD
ITERM
ITERM
MARKING
CGN
CGN
NXK
NXK
(1) The RGT package is available in the following options:
R - taped and reeled in quantities of 3000 devices per reel.
T - taped and reeled in quantities of 250 devices per reel.
(2) This product is RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for
use in specified lead-free soldering processes. In addition, this product uses package materials that do not contain halogens, including
bromine (Br) or antimony (Sb) above 0.1% of total product weight.
ABSOLUTE MAXIMUM RATINGS(1)
over the 0°C to 125°C operating free-air temperature range (unless otherwise noted)
VI
Input voltage
II
Input current
IO
Output current (continuous)
Output sink current
TJ
Junction temperature
Tstg Storage temperature
IN (with respect to VSS)
OUT (with respect to VSS)
BAT (with respect to VSS)
EN1, EN2, CE, TS, ISET, PGOOD, CHG, ILIM, TMR, TD,
ITERM (with respect to VSS)
IN
OUT
BAT (Discharge mode)
CHG, PGOOD
VALUE
–0.3 to 28
–0.3 to 7
–0.3 to 5
–0.3 to 7
600
600
600
15
–40 to 150
–65 to 150
UNIT
V
V
V
V
mA
mA
mA
mA
°C
°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
DISSIPATION RATINGS(1)
PACKAGE (2)
RGT (1)
RθJA
39.47 °C/W
RθJC
2.4 °C/W
POWER RATING
TA ≤ 25°C
2.3 W
TA = 85°C
225 mW
(1) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is
connected to the ground plane by a 2x3 via matrix.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
2
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