TLE2161 Datasheet, PDF (16/29 Pages) Texas Instruments – EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
µPOWER OPERATIONAL AMPLIFIERS
SLOS049D – NOVEMBER 1989 – REVISED MAY 1996
PARAMETER MEASUREMENT INFORMATION
8 kΩ
VCC ₊
–
VO
2 kΩ
VI
+
VCC _–
CL
(see Note A)
2 kΩ
VCC ₊
–
VO
+
VCC _–
RS
RS
NOTE A: CL includes fixture capacitance.
Figure 1. Slew-Rate Test Circuit
10 kΩ
Figure 2. Noise-Voltage Test Circuit
100 Ω
VI
VCC ₊
–
VO
+
VCC _–
CL
RL
(see Note A)
NOTE A: CL includes fixture capacitance.
Figure 3. Gain-Bandwidth Product and Phase-Margin Test Circuit
typical values
Typical values presented in this data sheet represent the median (50% point) of device parametric performance.
Input bias and offset current
At the picoampere bias-current level typical of the TLE2161, TLE2161A, and TLE2161B, accurate
measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter,
but test socket leakages can easily exceed the actual device bias currents. To accurately measure these small
currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters
with bias voltages applied but with no device in the socket. The device is then inserted into the socket, and a
second test that measures both the socket leakage and the device input bias current is performed. The two
measurements are then subtracted algebraically to determine the bias current of the device.
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