TC217 Datasheet, PDF (15/21 Pages) Texas Instruments – 1158- × 488-pixel ccd image sensor

TC217
1158- × 488-PIXEL CCD IMAGE SENSOR
SOCS015C – OCTOBER 1989 – REVISED JUNE 1996
optical characteristics, T_A = 25°C, exposure time = 33 ms (unless otherwise noted)
PARAMETER
MIN TYP
MAX UNIT
Sensitivity (see Notes 9 and 10)
No IR filter
With IR filter
400
mV/lx
50
Saturation signal, Vsat (see Note 11)
Image-area well capacity
320 410
60 x 103
mV
electrons
Blooming overload ratio (see Note 12) Exposure time = 1/60 second
150 200
Smear (see Notes 13 and 14)
0.0012
Output signal uniformity
VO = 1/2 VU (see Note 10)
1 mV
Dark signal (see Note 15)
TA = 40°C
5
6 mV
Dark signal uniformity
Dark current
TA = 40°C
TA = 21°C
0.027
0.3 mV
nA/cm2
NOTES: 9. Sensitivity is measured at any illumination level that gives an output voltage level less than VU. A CM-500 filter is used.
10. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio
is the ratio of blooming exposure to saturation exposure.
13. Smear is the measure of error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image area vertical height with recommended clock frequencies.
14. The fast-dump clocking rate during vertical timing is 1.2 MHz, and the illuminated section is 1/10 of the height of the image section.
15. Dark-signal level is measured from the dark dummy pixels.
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