TC25SPD Datasheet, PDF (1/19 Pages) Texas Instruments – 680 X 500 PIXEL CCD IMAGE SENSOR

TC253SPD
680ā×ā500 PIXEL CCD IMAGE SENSOR
D Very Low Noise, High Sensitivity,
Electronically Variable
D High Resolution, 1/3-in Format, Solid State
Charge-Coupled Device (CCD) Frame
Transfer Image Sensor for Black and White
National Television and Standard
Committee (NTSC) and Computer
Applications
D 340,000 Pixels per Field
D Frame Memory
D 656 (H) × 496 (V) Active Pixels in Image
Sensing Area Compatible With Electronic
Centering
D Multimode Readout Capability
– Progressive Scan
– Interlace Scan
– Line Summing
D Fast Single-Pulse Clear Capability
D Continuous Electronic Exposure Control
from 1/60 s to 1/5,000 s
D 7.4 µm Square Pixels
D Advanced Lateral Overflow Drain
D Low Dark Current
ODB 1
IAG2 2
SAG2 3
SRG1 4
SRG2 5
CMG 6
SOCS062B – JANUARY 2001 – REVISED MAY 2002
DUAL-IN-LINE PACKAGE
(TOP VIEW)
12 IAG1
11 SAG1
10 SUB
9 ADB
8 NC
7 V_out
D High Photoresponse Uniformity from
Deep Ultraviolet (DUV) to Near Infrared
(NIR)
D Solid State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
description
The TC253SPD device is a frame-transfer, CCD image sensor designed for use in black and white NTSC TV,
computer, and special-purpose applications that require high sensitivity, low noise, and small size.
The TC253SPD sensor is a new device of the IMPACTRONt family of very low noise, high sensitivity image
sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier
multiplication (CCM) is achieved by using a low-noise, single-carrier, impact ionization process that occurs
during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed
gates activates the CCM. The amount of multiplication is adjustable, depending on the amplitude of the
multiplication pulses. The device function resembles the function of image intensifiers implemented in solid
state.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
IMPACTRON is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
ADVANCE INFORMATION concerns new products in the sampling or
preproduction phase of development. Characteristic data and other
specifications are subject to change without notice.
Copyright  2002, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
1