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AMC1100 Datasheet, PDF (1/22 Pages) Texas Instruments – Fully-Differential Isolation Amplifier for Energy Metering
AMC1100
www.ti.com
SBAS562 – APRIL 2012
Fully-Differential Isolation Amplifier for Energy Metering
Check for Samples: AMC1100
FEATURES
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•2 ±250-mV Input Voltage Range Optimized for
Shunt Resistors
• Very Low Nonlinearity: 0.075% max at 5 V
• Low Offset Error: 1.5 mV max
• Low Noise: 3.1 mVRMS typ
• Low High-Side Supply Current:
8 mA max at 5 V
• Input Bandwidth: 60 kHz min
• Fixed Gain: 8 (0.5% Accuracy)
• High Common-Mode Rejection Ratio: 108 dB
• Low-Side Operation: 3.3 V
• Certified Galvanic Isolation:
– UL1577 and IEC60747-5-2 Approved
– Isolation Voltage: 4250 VPEAK
– Working Voltage: 1200 VPEAK
– Transient Immunity: 2.5 kV/µs min
• Typical 10-Year Lifespan at Rated Working
Voltage (see Application Report SLLA197)
• Fully Specified Over the Extended Industrial
Temperature Range
DESCRIPTION
The AMC1100 is a precision isolation amplifier with
an output separated from the input circuitry by a
silicon dioxide (SiO2) barrier that is highly resistant to
magnetic interference. This barrier has been certified
to provide galvanic isolation of up to 4250 VPEAK,
according to UL1577 and IEC60747-5-2. Used in
conjunction with isolated power supplies, this device
prevents noise currents on a high common-mode
voltage line from entering the local ground and
interfering with or damaging sensitive circuitry.
The AMC1100 input is optimized for direct connection
to shunt resistors or other low voltage level signal
sources. The excellent performance of the device
enables accurate current and voltage measurement
in energy-metering applications. The output signal
common-mode voltage is automatically adjusted to
either the 3-V or 5-V low-side supply.
The AMC1100 is fully specified over the extended
industrial temperature range of –40°C to +105°C and
is available in the SMD-type, gullwing-8 package.
APPLICATIONS
• Shunt Resistor Based Current Sensing in:
– Energy Meters
– Green Energy
– Power Measurement Applications
VDD1
VDD2
5V
VINP
2.55 V
2V
VOUTP
0V
250 mV
VINN
3.3 V
VOUTN
1.29 V
2V
GND1
GND2
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
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PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated