RHRG30120 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – 30A, 1200V Hyperfast Diode

RHRG30120
®
60
50
40
TJ =125°C
30
20
TJ =25°C
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF（V）
Fig1. Forward Voltage Drop vs Forward Current
500
400
IF=60A
300
VR=600V
TJ =125°C
200 _IF=30A
IF=15A
100
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig2. Reverse Recovery Time vs diF/dt
50
VR=600V
TJ =125°C
40
IF=60A
30
20
10
IF=30A
IF=15A
5
VR=600V
TJ =125°C
4
IF=60A
3
2
1
IF=30A
IF=15A
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt
1.4
1.2
1.0
0.8
0.6
trr
0.4 ^IRRM
0.2 Q_rr
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
.
.
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10^-1
10^-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10^-3_10-4
10^-3
10^-2
10^-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
.
Rev.05
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