RHRG30120 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – 30A, 1200V Hyperfast Diode

RHRG30120
®
RHRG30120
Pb
Pb Free Plating Product
30 Ampere,1200Volt SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247-2L
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
RHRG30120 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
1200
V
V RRM
Maximum Repetitive Reverse Voltage
1200
V
I F(AV)
Average Forward Current
TC=110°C
30
A
IF(RMS) RMS Forward Current
TC=110°C
42
A
I FSM
Non-Repetitive Surge Forward Current ^TJ^{=45°C, t=10ms, 50Hz, Sine}
300
A
PD
Power Dissipation
115
W
TJ
Junction Temperature
-40 to +150
°C
T STG
Storage Temperature Range
-40 to +150
°C
Torque Module-to-Sink
Recommended（M3）
1.1
N·m
R θJC
Thermal Resistance
Weight
ELECTRICAL CHARACTERISTICS
Junction-to-Case
1.1
°C /W
7.0
g
TC=25°C unless otherwise specified
Symbol
Parameter
I RM
Reverse Leakage Current
Test Conditions
VR=1200V
VR=1200V, TJ=125°C
Min. Typ. Max. Unit
--
-- ^{100 µA}
--
--
1
mA
VF
Forward Voltage
I F =30A
IF=30A, TJ=125°C
-- 2.15 2.5
V
-- 1.75 --
V
t rr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs --
30
--
ns
t rr
Reverse Recovery Time
VR=600V, IF=30A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 160 --
ns
--
5
--
A
t rr
Reverse Recovery Time
VR=600V, IF=30A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 300 --
ns
--
11
--
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/